The change in the interface-state Fermi level of M.I.S. solar cells when going from dark to illuminated conditions

Access Full Text

The change in the interface-state Fermi level of M.I.S. solar cells when going from dark to illuminated conditions

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Journal on Solid-State and Electron Devices — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Current/voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si M.I.S. solar cells. The results show that the voltage drop across the oxide is changed, owing to the increased surface concentration of minority carriers when going from dark to illuminated conditions. The inverse slopes nof the linear region have been measured and the interface-state densities NSS have been calculated. From the voltage changes and interface state densities obtained, the changes in the interface-state Fermi levels have been calculated to be about 0.05–0.1 eV for short-circuit currents of 25–30 mA cm−2

Inspec keywords: metal-insulator-semiconductor devices; solar cells; interface electron states

Other keywords: minority carriers; interface state; Fermi level; MIS; current voltage characteristics; solar cells; Al-p-Si

Subjects: Solar cells and arrays; Photoelectric conversion; solar cells and arrays

References

    1. 1)
      • L.C. Olsen . Model calculations for metal-insulator-semiconductor solar cells. Solid-State Electron. , 741 - 751
    2. 2)
      • O.M. Nielsen . Effects of minority-carrier storage at the interface states on the fill factor of M.I.S. solar cells. IEE J. Solid-State &Electron Devices , 51 - 55
    3. 3)
      • H.C. Card , E.H. Rhoderick . Studies of tunnel MOS diodes-I. Interface effects in silicon Schottky diodes. J. Phys. D , 1589 - 1601
    4. 4)
      • H.C. Card . Photovoltaic properties of MIS – Schottky barriers. Solid-State Electron. , 971 - 976
    5. 5)
      • S.J. Fonash . The role of interfacial layer in metal-semiconductor solar cells. J. Appl. Phys. , 1286 - 1289
    6. 6)
      • M.A. Green , F.D. King , J. Shewjun . Minority carrier MIS tunnel diodes and their application to electron and photovoltaic energy conversion, I, II. Solid-State Electron. , 551 - 561, 563–572
    7. 7)
      • P.V. Gray , D.M. Brown . Density of SiO2-Si interface states. Appl. Phys. Lett. , 31 - 33
    8. 8)
      • W.L. Harrington , R.E. Honig , A.M. Goodman , R. Williams . Low energy ion-scattering spectrometry (ISS) of the SiO2/Si interface. Appl. Phys. Lett , 644 - 645
    9. 9)
      • E.J. Charlson , J.C. Lien . An Alp-silicon MOS photovoltaic cell. J. Appl. Phys. , 3982 - 3987
http://iet.metastore.ingenta.com/content/journals/10.1049/ij-ssed.1979.0013
Loading

Related content

content/journals/10.1049/ij-ssed.1979.0013
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading