Effects of minority-carrier storage at the interface states on the fill factor of m.i.s. solar cells

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Effects of minority-carrier storage at the interface states on the fill factor of m.i.s. solar cells

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© The Institution of Electrical Engineers
Published

Current/voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si M.I.S. solar cells. The results obtained show that the voltage across the cells taken at the maximum powerpoint is typically 50 mV smaller when the cells are illuminated compared to the voltage at the same point in darkness. This is explained as an increase in the recombination current and as an increased concentration of minority carriers at the interface states of about 1012cm−2when going from dark to illuminated conditions. The result is that the fill factor obtained from the illuminated characteristic is about 9% smaller than if the fill factor is calculated from the dark characteristics.

Inspec keywords: interface electron states; solar cells; minority carriers; metal-insulator-semiconductor devices

Other keywords: fill factor; IV characteristics; interface states; MIS solar cells; Al-SiO2-Si

Subjects: Other field effect devices; Electrical properties of metal-insulator-semiconductor structures; Solar cells and arrays; Metal-insulator-semiconductor structures; Photoelectric conversion; solar cells and arrays

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