http://iet.metastore.ingenta.com
1887

Effects of fixed charges in the oxide of thermally oxidised m.i.s. solar cells

Effects of fixed charges in the oxide of thermally oxidised m.i.s. solar cells

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Journal on Solid-State and Electron Devices — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The open-circuit voltage Vo.c of m.i.s. cells has been reported and has been observed from our own experiments to be in the range of 400–525 mV for Al-SiO2-p-Si cells and in the range of 220–400 mV for Au-SiO2-n-Si cells. This is in contrast to the reported values of barrier heights for schottky diodes without an insulating layer. The difference in Voc is due to the change in the effective barrier height ømS. The change in ømS is assumed to be due to fixed positive charges in the thin oxide, and from the reported values of ømS the charge density in the oxide Qss/q has been calculated to be about 5 × 1012 cm−2.

References

    1. 1)
      • H.C. Card , E.H. Rhoderick . Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D. , 1589 - 1601
    2. 2)
      • H.C. Card . Potential barriers to electron tunnelling in ultrathin films of SiO2. Solid State Commun. , 1011 - 1014
    3. 3)
      • H.C. Card . Photovoltaic properties of MIS-Schottky barriers. Solid-State Electron. , 971 - 976
    4. 4)
      • D.R. Lillington , W.G. Townsend . Effects of interfacial oxide layers on the performance of silicon Schottkybarrier solar cells. Appl. Phys. Lett. , 97 - 98
    5. 5)
      • E.J. Charlson , J.C. Lien . An Alp-silicon MOS photovoltaic cell. J. Appl. Phys. , 3982 - 3987
    6. 6)
      • S.M. Sze . (1969) , Physics of semiconductor devices.
    7. 7)
      • B.L. Smith , E.H. Rhoderick . Schottky barriers on p-type silicon. Solid-State Electron. , 71 - 75
    8. 8)
      • L.C. Olsen . Model calculations for metal-insulator-semiconductor solar cells. Solid-State Electron. , 741 - 751
    9. 9)
      • W.L. Harrington , R.E. Honig , A.M. Goodman , R. Williams . Low energy ion-scattering spectrometry (ISS) of the SiO2/Si interface. Appl. Phys. Lett. , 644 - 645
    10. 10)
      • J.S. Johannessen , W.E. Spicer . Auger depth profiling of interfaces on MOS and MNOS structures. J. Vac. Sci. & Technol. , 849 - 855
http://iet.metastore.ingenta.com/content/journals/10.1049/ij-ssed.1978.0052
Loading

Related content

content/journals/10.1049/ij-ssed.1978.0052
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address