Infrared high spatial-resolution determination of doping levels in p-n junctions

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Infrared high spatial-resolution determination of doping levels in p-n junctions

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© The Institution of Electrical Engineers
Published

A nondestructive infrared emission-measurement technique, which allows point-by-point determination of the effective doping level within the depletion layer of a reverse-biased p-n junction, is described. The method is an alternative to normal capacitance-voltage techniques which give a value averaged over the entire junction area. With this technique a spatial resolution of about 15 μm is obtainable and a further advantage is that it is unaffected by high reverse currents.

Inspec keywords: emissivity; p-n junctions; doping profiles

Other keywords: doping levels; capacitance voltage techniques; semiconductor; nondestructive IR emission measurement; IR high spatial resolution; depletion layer; high reverse currents; p-n junctions

Subjects: Semiconductor junctions; Semiconductor doping; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Impurity concentration, distribution, and gradients

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