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Infrared high spatial-resolution determination of doping levels in p-n junctions

Infrared high spatial-resolution determination of doping levels in p-n junctions

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A nondestructive infrared emission-measurement technique, which allows point-by-point determination of the effective doping level within the depletion layer of a reverse-biased p-n junction, is described. The method is an alternative to normal capacitance-voltage techniques which give a value averaged over the entire junction area. With this technique a spatial resolution of about 15 μm is obtainable and a further advantage is that it is unaffected by high reverse currents.

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