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The spectral response, the voltage and current that give maximum power, and the conversion efficiency have all been calculated for Ga1-xAlxAs/p-GaAs/n-GaAs solar cells that have multilayer GaAlAs windows on their surfaces. In the numerical analysis, photo-generated carrier collection in the window layers was considered. The spectral response in the short-wavelength region could be improved if either the Al composition factor x of the window layer was made larger or the window was made thinner. The lifetime of the carriers in the p-GaAs layer is especially important for improving the spectral response and the conversion efficiency. The increases of donor concentration in the n-GaAs bulk region and of acceptor concentration in the p-GaAs layer cause the current and voltage to increase. Thus the multilayer structures can make efficient use of the short-wavelength region of the spectrum and be easier to produce than a continuously graded structure. Conversion efficiencies can be approximately 20% in AMO.
References
-
-
1)
-
H.J. Hovel ,
J.M. Woodall
.
Ga1-xAlx As-GaAs p-p-n heterojunction solar cells.
J. Electrochem. Soc.
,
1246 -
1252
-
2)
-
A. Usami
.
Predicted effects of gamma and neutron irradiation on silicon solar cells.
Opto-elecironies
,
223 -
236
-
3)
-
H.J. Hovel
.
(1975)
, Semiconductor and semimetals – Solar cell.
-
4)
-
H.C. Casey ,
M.B. Panish
.
Composition dependence of Ga1-xAlx As direct and indirect energy gaps.
J. Appl. Phys.
,
4910 -
4912
-
5)
-
B. Ellis ,
T.S. Moss
.
Calculated efficiencies of practical GaAs and Si solar cells including the effect of built in electric fields.
Solid-State Electron
,
1 -
24
-
6)
-
J.M. Woodall ,
H.J. Hovel
.
High efficiency Ga1-xAlxAs-GaAs solar cells.
Appl. Phys. Lett.
,
379 -
381
-
7)
-
Konagai, M., Takahashi, K.: `High efficient graded-band gap ', Proceedings of the international electron device meeting, 1975, p. 95–98.
-
8)
-
Hovel, H.J., Woodall, J.M., Howard, W.E.: `The spectral response and conversion efficiency of Ga', Proceedings of 1972 Symposium on GaAs, Colo Boulder, p. 205–213.
http://iet.metastore.ingenta.com/content/journals/10.1049/ij-ssed.1977.0028
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