Switching characteristics of m.n.o.s. memory transistors

Switching characteristics of m.n.o.s. memory transistors

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
IEE Journal on Solid-State and Electron Devices — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The m.n.o.s. transistor has gained widespread acceptance as a nonvolatile memory element. In the present paper, we examine the switching properties of the m.n.o.s. transistor by comparing the experimentally determined oxide injection current to theoretically calculated oxide currents. On basis of this investigation, we present some calculated curves from which the switching properties can be predicted for the range of gate voltages normally used for writing. Furthermore, it is shown that the switching properties at low gate voltages depend entirely on the trap density and distribution in the nitride. Usually, it is desirable to minimise the swtiching for low gate voltages. A discussion of the requirements that this imposes on the trap distribution is presented


    1. 1)
      • I. Lunström , C. Svensson . Properties of MNOS structures. IEEE Trans. , 826 - 836
    2. 2)
      • C.M. Svensson , K.I. Lundström . Trap-assisted charge injection in MNOS structures. J.Appl.Phys. , 4657 - 4663
    3. 3)
      • H.E. Maes , R.J. van Overstraeten . Low-field behaviour of MNOS devices. J.Appl.Phys. , 664 - 666
    4. 4)
      • N. Gordon , W. Johnson . Switching mechanisms in tin-oxide MNOS devices. IEEE Trans. , 253 - 263
    5. 5)
      • M. Lenzlinger , E.H. Snow . Fowler–Nordheim tunelling into thermally grown SiO2. J.Appl.Phys. , 278 - 283
    6. 6)
      • H. Maes , R.J. Overstraeten . Simple technique for determination of centroid of nitirde charge in MNOS structures. Appl.Phys.Lett. , 282 - 284

Related content

This is a required field
Please enter a valid email address