Threshold voltage generation and supply-independent biasing in c.m.o.s. integrated circuits

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Threshold voltage generation and supply-independent biasing in c.m.o.s. integrated circuits

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© The Institution of Electrical Engineers
Published

A method is presented for the generation of a voltage equal to an integer multiple of the n-channel threshold voltage in c.m.o.s. integrated circuits. Experimental results from an integrated prototype are given and possible applications are discussed

Inspec keywords: field effect integrated circuits; integrated circuit technology

Other keywords: threshold voltage integer multiple generation; n-channel threshold voltage

Subjects: CMOS integrated circuits

References

    1. 1)
      • Y.P. Tsividis . Design considerations for single-channel MOS integrated circuits-a tutorial. IEEE J. Solid-State Circuits , 383 - 391
    2. 2)
      • Tsividis, Y.P., Ulmer, R.W.: `A CMOS reference voltage source', International Solid-State Circuits Conference, February 1978, San Francisco, p. 48–49, Digest of Technical Papers.
    3. 3)
      • L. Lau , W.M. Penney . (1972) , MOS integrated circuits.
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