Design of an HV capacitor using the inherent advantage of charge simulation method and experimentations

Harimurugan Devarajan; Gururaj S. Punekar; Nudurupati Krishna Kishore

Design of an HV capacitor using the inherent advantage of charge simulation method and experimentations

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Author(s): Harimurugan Devarajan¹ ; Gururaj S. Punekar¹ ; Nudurupati Krishna Kishore²
- Affiliations: 1: Department of Electrical and Electronics Engineering , National Institute of Technology Karnataka , Surathkal, Mangalore 575 025, Karnataka , India ;
  2: Department of Electrical Engineering , Indian Institute of Technology Kharagpur , Kharagpur 721302, West Bengal , India
Source: Volume 12, Issue 1, January 2018, p. 126 – 131
DOI: 10.1049/iet-smt.2017.0121 , Print ISSN 1751-8822, Online ISSN 1751-8830

Received 17/03/2017, Accepted 27/09/2017, Revised 16/09/2017, Published 03/10/2017

Standard capacitors form an important component of the measurement and instrumentation in the electrical laboratory. A high-voltage (HV) standard capacitor of 100 pF, 12 kV (rms) is designed using the charge simulation method (CSM). CSM is a semi-analytical method and it provides inherent advantage in designing a capacitor from the first principle. The capacitance is obtained from the magnitude of the simulating charges of the CSM-based model and the corresponding potential. The design details of HV standard capacitor are discussed along with the analysis of the potential and the electric stress distribution. The electric stress everywhere in the capacitor, which is designed, is assured to be <5 kV/cm, which was set as the limiting (maximum permissible) stress. The capacitance of the fabricated unit is measured in the HV laboratory. The CSM-based result of the capacitance of the designed HV capacitor agree well with the results of the laboratory experimental measurement. The inherent advantage of CSM in designing a capacitor is confirmed by comparing with the results of method of moments (MoM).

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Design of an HV capacitor using the inherent advantage of charge simulation method and experimentations

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