Up to now the vast majority of insulated gate bipolar transistors (IGBTs) has been produced on silicon (Si) wafers out of the float-zone (FZ) process. FZ crystals can easily be used for this application, but are only available with a diameter of up to 200 mm. However, the use of wafer substrates with a diameter of 300 mm offers a significant increase in productivity and is therefore the diameter of choice for the high-volume production of CMOS devices. In order to benefit from this advantage also for the manufacturing of IGBTs, material out of the magnetic Czochralski process, which is available in 300 mm, had to be adapted. Key issues include crystal originated particles, dopant segregation along the crystal axis, and the higher concentration of oxygen. In particular, the implementation of the field-stop zone by the implantation of protons will lead to the additional formation of hydrogen-decorated C_IO_I complexes which can act electrically as donors. However, by an appropriate adjustment of the processing parameters the electrical characteristics of IGBTs on FZ substrates can be well reproduced.

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Fabrication of IGBTs using 300 mm magnetic Czochralski substrates

References

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