Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

access icon free Fabrication of IGBTs using 300 mm magnetic Czochralski substrates

Up to now the vast majority of insulated gate bipolar transistors (IGBTs) has been produced on silicon (Si) wafers out of the float-zone (FZ) process. FZ crystals can easily be used for this application, but are only available with a diameter of up to 200 mm. However, the use of wafer substrates with a diameter of 300 mm offers a significant increase in productivity and is therefore the diameter of choice for the high-volume production of CMOS devices. In order to benefit from this advantage also for the manufacturing of IGBTs, material out of the magnetic Czochralski process, which is available in 300 mm, had to be adapted. Key issues include crystal originated particles, dopant segregation along the crystal axis, and the higher concentration of oxygen. In particular, the implementation of the field-stop zone by the implantation of protons will lead to the additional formation of hydrogen-decorated CIOI complexes which can act electrically as donors. However, by an appropriate adjustment of the processing parameters the electrical characteristics of IGBTs on FZ substrates can be well reproduced.

References

    1. 1)
      • 12. Laven, J.G., Job, R., Schulze, H.-J., et al: ‘Activation and dissociation of proton-induced donor profiles in silicon’, ECS J. Solid State Sci. Technol., 2013, 2, (9), pp. 389394.
    2. 2)
      • 2. Niedernostheide, F.-J., Schulze, H.-J., Felsl, H.P., et al: ‘Tailoring of field-stop layers in power devices by hydrogen-related donor formation’. Proc. ISPSD'16, Prague, Czech Republic, June 2016, pp. 323326.
    3. 3)
      • 13. Alt, H.Ch., Gomeniuk, Y., Wiedemann, B., et al: ‘Method to determine carbon in silicon by infrared absorption spectroscopy’, J. Electrochem. Soc., 2003, 150, (8), pp. G498G501.
    4. 4)
      • 4. Takano, K., Kiyoi, A., Minato, T.: ‘Study about Si wafer (mother) material for high speed LPT-CSTVT based on electrical and physical analysis’. Proc. ISPSD'15, Kowloon Shangri-La, Hong Kong, May 2015, pp. 129132.
    5. 5)
      • 6. Asom, M.T., Benton, J.L., Sauer, R., et al: ‘Interstitial defect reactions in silicon’, Appl. Phys. Lett., 1987, 51, pp. 256258.
    6. 6)
      • 11. Raeissi, B., Ganagona, N., Galeckas, A., et al: ‘PL and DLTS analysis of carbon-related centers in irradiated P-type Cz-Si’, Solid State Phenom., 2014, 205, pp. 224227.
    7. 7)
      • 3. Komarnitskyy, V., Hazdra, P.: ‘Thermal donor formation in silicon enhanced by high-energy helium irradiation’, Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At., 2006, 253, pp. 187191.
    8. 8)
      • 14. Schulze, H.-J., Öfner, H., Niedernostheide, F.-J., et al: ‘Fabrication of medium power insulated gate bipolar transistors using 300 mm magnetic Czochralski silicon wafers’, Phys. Status Solidi A, 2019, 216, p. 1900235.
    9. 9)
      • 5. Davies, G., Oates, A.S., Newman, R.C., et al: ‘Carbon-related radiation damage centres in Czochralski silicon’, J. Phys. C, Solid State Phys., 1986, 19, pp. 841856.
    10. 10)
      • 8. Schulze, H.-J., Kolbesen, B.: ‘Influence of silicon crystal defects and contamination on the electrical behavior of power devices’, Solid-State Electron., 1998, 42, pp. 21872197.
    11. 11)
      • 7. Schulze, H.-J., Öfner, H., Niedernostheide, F.-J.: ‘Fabrication of IGBTs using 300 mm magnetic Czochralski substrates’. Proc. ISPS'18, Prague, Czech Republic, 2018, pp. 712.
    12. 12)
      • 10. Kimerling, L., Asom, M., Benton, J., et al: ‘Defects in semiconductors’, Mater. Sci. Forum, 1989, 38–41, pp. 141150.
    13. 13)
      • 1. Schulze, H.-J., Öfner, H., Niedernostheide, F.-J., et al: ‘Use of 12′′ magnetic CZ wafers for the fabrication of IGBTs’. Proc. ISPSD'16, Prague, Czech Republic, June 2016, pp. 355358.
    14. 14)
      • 9. Ganagona, N., Raeissi, B., Vines, L., et al: ‘Defects in p-type CZ-silicon irradiated at elevated temperatures’, Phys. Status. Sol. C, 2012, 9, (9–11), pp. 20092012.
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-pel.2019.0444
Loading

Related content

content/journals/10.1049/iet-pel.2019.0444
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address