access icon free EMI mitigation in switching power converters combining closed-loop gate drive and chaotic frequency modulation technique

© The Institution of Engineering and Technology
Received 23/10/2018, Accepted 20/05/2019, Revised 17/05/2019, Published 06/06/2019

All switching power converters are characterised by inevitable switching actions with relevant interference emissions. The voltage and current transients of power metal oxide semiconductor field effect transistor (MOSFET)/insulated-gate bipolar transistor are the main sources in switching power converters for both conducted and radiated emissions. In this study, a promising electromagnetic interference (EMI) mitigation method combining the closed-loop gate drive method and the chaotic switching frequency modulation technique is demonstrated for switching power converters. A chaotic pulse-width modulation waveform with Gaussian S-shape switching transients was proposed to achieve remarkable reduced EMI generation at all frequencies. Spectral characteristics of this new switching waveform were investigated by the power spectral density to verify the feasibility of reduced EMI generation. A closed-loop gate controller was presented to shape the switching transients of power MOSFET into the proposed switching waveform. Circuit tests were carried out in both simulations and experiments. The results validated that the proposed method could achieve remarkable EMI mitigation in switching power converters.

Inspec keywords: power MOSFET; insulated gate bipolar transistors; switching transients; electromagnetic interference; switching convertors

Other keywords: power MOSFET; EMI mitigation; radiated emissions; conducted emissions; chaotic pulse-width modulation waveform; chaotic switching frequency modulation technique; chaotic frequency modulation technique; power spectral density; closed-loop gate controller; voltage transients; power metal oxide semiconductor field effect transistor; switching power converters; Gaussian S-shape switching transients; electromagnetic interference mitigation method; closed-loop gate drive; current transients; insulated-gate bipolar transistor

Subjects: Power semiconductor devices; Electromagnetic compatibility and interference; Insulated gate field effect transistors; Bipolar transistors; Power convertors and power supplies to apparatus; Power electronics, supply and supervisory circuits

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