access icon free Snap-back free shorted-anode super-junction TCIGBT

A novel structure called the shorted-anode super-junction trench clustered insulated gate bipolar transistor (SA-SJ-TCIGBT) is proposed and demonstrated through numerical simulations in 1.2 kV, field-stop technology. This device is based on the SJ-TCIGBT concept. In the SA-SJ-TCIGBT structure, due to the introduction of a segmented n+-anode, the device can operate in both forward conducting mode and freewheeling diode mode without any snap back in the current–voltage characteristics. In comparison to the SJ-TCIGBT structure, the proposed device shows significant improvement in trade-off relationship between forward voltage drop and switch off energy losses. Simulation results show that 25% decrease in switching energy losses can be achieved. Moreover, the tail current is effectively reduced without any increase in the overshoot voltage. Detailed two-dimensional modelling of the structure shows that significant amount of excess electrons are extracted through the SA structure during turn-off process.

Inspec keywords: insulated gate bipolar transistors; anodes; power semiconductor switches

Other keywords: field-stop technology; switch off energy losses; forward conducting mode; voltage 1.2 kV; segmented n+-anode; shorted-anode super-junction TCIGBT; shorted-anode super-junction trench clustered insulated gate bipolar transistor; snap-back free TCIGBT; switching energy losses; excess electrons; freewheeling diode mode; SA-SJ-TCIGBT structure; forward voltage drop; tail current; current-voltage characteristics; overshoot voltage

Subjects: Power semiconductor devices; Bipolar transistors; Insulated gate field effect transistors

http://iet.metastore.ingenta.com/content/journals/10.1049/iet-pel.2017.0407
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content/journals/10.1049/iet-pel.2017.0407
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