access icon free Development of a 20 kV damped oscillating voltage generator

This study describes the design and development of a 20 kV rated damped oscillating voltage (DOV) generator that can detect the partial discharge (PD) condition in 6/10 kV power cables. A complete system using a novel high-voltage switch consisting of a series of connected insulated gate bipolar transistors (IGBTs) is designed and tested. The switch consists of ten identical IGBT switch units, a multiple output isolated power supply system and a trigger unit. Physically, it is a 60 cm diameter fan-shaped printed circuit board. To coordinate the various tested objects and to comply with the IEC 60060-3 standards, an air-core inductor is calculated to precisely fit the most general application conditions using the magnetic vector potentials method. A laboratory prototype is assembled and tested. Waveforms illustrating the performance of the IGBT switch and the output of the DOV are presented. Finally, an application-oriented test demonstrates that the scheme can successfully complete the PD test and PD location test for a cable sample.

Inspec keywords: partial discharges; power inductors; electric generators; insulated gate bipolar transistors; power semiconductor switches; power cables; power supplies to apparatus

Other keywords: rated damped oscillating voltage generator; power cables; fan-shaped printed circuit board; air-core inductor; trigger unit; PD test; identical IGBT switch units; partial discharge condition; magnetic vector potentials method; high-voltage switch; IEC 60060-3 standards; multiple output isolated power supply system; insulated gate bipolar transistors; application-oriented test; PD location test

Subjects: Bipolar transistors; Power transmission, distribution and supply; Dielectric breakdown and discharges; Power convertors and power supplies to apparatus; Power semiconductor devices; Small and special purpose electric machines; Transformers and reactors; Power cables; a.c. machines; Insulated gate field effect transistors

References

    1. 1)
      • 2. Mashikian, M.S.: ‘Preventive diagnostic testing of underground cables’. IEEE/PES Transmission and Distribution Conf. and Exposition, 2001, 2001, vol. 2, pp. 985990.
    2. 2)
    3. 3)
    4. 4)
    5. 5)
      • 21. Locher, R.E.: ‘New 1600 V BIMOSFET transistors open up new applications’, IXYS Corporation, p. 10.
    6. 6)
    7. 7)
    8. 8)
    9. 9)
      • 25. Abe, Y., Maruyama, K., Matsumoto, Y., et al: ‘Performance of IGBTs series connection technologies for auxiliary power supply system’. Power Conversion Conf. – Nagoya, 2007. PCC '07, 2007, pp. 13821387.
    10. 10)
    11. 11)
      • 31. Ramo, S., Whinnery, J.R., Van Duzer, T.: ‘Fields and waves in communication electronics’ (Wiley, 2007).
    12. 12)
    13. 13)
    14. 14)
    15. 15)
    16. 16)
      • 4. Koo, J.Y., Kim, J.T., Lee, J.S., et al: ‘A study on the oscillating wave voltage test as an after-laying test for distribution power cables’. Conf. on Electrical Insulation and Dielectric Phenomena, 1997. IEEE 1997 Annual Report, 1997, vol. 1, pp. 334341.
    17. 17)
    18. 18)
    19. 19)
      • 27. Nguyen, T.V., Jeannin, P.O., Vagnon, E., et al: ‘Series connection of IGBT’. Twenty-Fifth Annual IEEE Applied Power Electronics Conf. and Exposition (APEC), 2010, 2010, pp. 22382244.
    20. 20)
      • 32. Abramowitz, M., Stegun, I.: ‘Handbook of mathematical functions’ (1970).
    21. 21)
      • 29. Withanage, R., Crookes, W., Shammas, N.: ‘Novel voltage balancing technique for series connection of IGBTs’. European Conf. on Power Electronics and Applications, 2007, 2007, pp. 110.
    22. 22)
    23. 23)
    24. 24)
      • 30. Hayt, W.H., Buck, J.A.: ‘Engineering electromagnetics’ (New York, 2006).
    25. 25)
      • 28. Withanage, R., Shammas, N., Tennakoon, S.: ‘Series connection of insulated gate bipolar transistors (IGBTs)’. European Conf. on Power Electronics and Applications, 2005, 2005, p. 10.
    26. 26)
    27. 27)
    28. 28)
      • 3. Kando, M.: ‘A high voltage damped oscillating wave generator’. IEEE Region 10 Conf., TENCON 2004, 2004, 2004, vol. 4, pp. 124127.
    29. 29)
      • 22. Locher, R.E., Pathak, A.D.: ‘Use of BiMOSFETs in modern radar transmitters’. Proc. 2001, 4th IEEE Int. Conf. on Power Electronics and Drive Systems, 2001, 2001, pp. 711717.
    30. 30)
      • 26. Busatto, G., Abbate, C., Iannuzzo, F., et al: ‘High voltage, high performance switch using series connected IGBTs’. IEEE Power Electronics Specialists Conf., 2008. PESC 2008, 2008, pp. 16061611.
    31. 31)
      • 24. Ralph, O.Z., Locher, E.: ‘IXBH40N160 BiMOSFETTM developed for high voltage, high frequency applications’, I. Corporation..
    32. 32)
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-pel.2015.0021
Loading

Related content

content/journals/10.1049/iet-pel.2015.0021
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading