© The Institution of Engineering and Technology
Pre-charger is a specific DC–DC converter application in the railway propulsion system. This study demonstrates the possible causes for output diode failures in the pre-charger. Overshoot voltage during diode reverse-recovery is a main reason for such failure. A test set-up is proposed to study the influence of reverse bias on the overshoot voltage. The method to mitigate the contact bounce in the control circuit, in the test set-up, is also introduced. The relationship between the overshoot and reverse bias is studied by means of applying different reverse biases. The parasitic capacitance and reverse-recovery characteristic of the diode is changed by the exceeding reverse bias. Reverse-recovery time is reduced when the reverse voltage is beyond a critical level. To overcome the overshoot problem, a snubber is applied, and experimentally verified. Overvoltage is dramatically reduced by applying this snubber. Current and voltage waveforms in different branches are recorded so as to give a better understanding of the working mechanism of the snubber.
References
-
-
1)
-
M.T. Rahimo ,
N.Y.A. Shammas
.
Freewheeling diode reverse-recovery failure modes in IGBT applications.
IEEE Trans. Ind. Appl.
,
2 ,
661 -
670
-
2)
-
B.-R. Lin ,
K. Huang ,
D. Wang
.
Analysis, design, and implementation of an active clamp forward converter with synchronous rectifier.
IEEE Trans. Circuits Syst. I
,
6 ,
1310 -
1319
-
3)
-
F. Bertoluzza ,
P. Cova ,
N. Delmonte ,
P. Pampili ,
M. Portesine
.
Coupled measurement-simulation procedure for very high power fast recovery – soft behavior diode design and testing.
Microelectron. Reliab.
,
1720 -
1724
-
4)
-
V.K. Khanna
.
(2003)
The insulated gate bipolar transistor (IGBT): theory and design.
-
5)
-
P. Barkan
.
A study of the contact bounce phenomenon.
IEEE Trans. Power Appar. Syst.
,
2 ,
231 -
240
-
6)
-
N. Mohan ,
T.M. Undeland ,
W.P. Robbins
.
(2002)
Power electronics: converters, applications, and design.
-
7)
-
A.Q. Huang ,
V. Temple ,
Y. Liu ,
Y. Li
.
Analysis of the turn-off failure mechanism of silicon power diode.
Solid-State Electron.
,
727 -
739
-
8)
-
H. Benda ,
E. Spenke
.
Reverse recovery processes in silicon power rectifiers.
IEEE Proc.
,
8 ,
1331 -
1354
-
9)
-
P. Cova ,
R. Menozzi ,
M. Portesine
.
Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode design.
Microelectron. J.
,
5 ,
409 -
416
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-pel.2011.0495
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