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Quaternary AlInGaN-based photodetectors

Quaternary AlInGaN-based photodetectors

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  • Author(s): Y.D. Jhou 1 ; S.J. Chang 1, 2, 3 ; Y.K. Su 1, 2, 3 ; C.H. Chen 4 ; H.C. Lee 2 ; C.H. Liu 3 ; Y.Y. Lee 1
    • View affiliations
    • Affiliations: 1: Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan, Republic of China
      2: Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
      3: Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
      4: Department of Electronic Engineering, Cheng Shiu University, Kaohsiung, Taiwan, Republic of China
  • Source: Volume 2, Issue 1, February 2008, p. 42 – 45
    DOI:  10.1049/iet-opt:20070020 , Print ISSN 1751-8768, Online ISSN 1751-8776
© The Institution of Engineering and Technology
Published

The growth of quaternary AlInGaN epitaxial layer on GaN/sapphire substrates by metalorganic chemical vapour deposition is reported. It was found that AlInGaN layers were grown three dimensionally with rough surface at low temperatures and transferred to smooth two-dimensional growth at 860°C. It was also found that In mole fraction in the layers decreased significantly as the AlInGaN growth temperature was increased while Al composition ratio was much less temperature dependent. Furthermore, it was found that solar-blind metal-insulator-semiconductor photodetectors with AlInGaN layer prepared at 860°C could provide us a photocurrent-to-dark-current contrast ratio of 1.93×104 and a UV-to-visible rejection ratio of 38.0.

Inspec keywords: gallium compounds; aluminium compounds; semiconductor epitaxial layers; photodetectors; indium compounds; wide band gap semiconductors; MIS devices; MOCVD; III-V semiconductors; dark conductivity

Other keywords: temperature 860 degC; composition ratio; photocurrent-to-dark-current contrast ratio; GaN-Al2O3; sapphire substrates; growth temperature; UV-to-visible rejection ratio; AlGaInN; quaternary epitaxial layer; solar-blind metal-insulator-semiconductor photodetectors; metalorganic chemical vapour deposition

Subjects: Photodetectors; Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Metal-insulator-semiconductor structures; Chemical vapour deposition

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