36 GHz bandwidth optoelectronic integrated circuit with flip-chip-assembled InP HBT/evanescently coupled photodiode

36 GHz bandwidth optoelectronic integrated circuit with flip-chip-assembled InP HBT/evanescently coupled photodiode

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
IET Optoelectronics — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

An optoelectronic integrated circuit (OEIC) with flip-chip technology for 1.55-µm wavelength application is demonstrated. The presented flip-chip OEIC comprises an InP chip and the carrier substrate. The InP chip consists of an evanescently coupled photodiode (ECPD), an InP/InGaAs heterojunction bipolar transistor (HBT) and bonding pads. The semi-insulating GaAs carrier consists of a coplanar waveguide, bias resistances, interconnects and pads (DC, RF and bonding pads). The flip-chip technology is used to reduce InP chip size and thus save cost. The fabricated ECPD exhibits a responsivity of 0.3 A/W and an f−3 dB of 30 GHz. The OEIC demonstrates an f−3 dB of 36 GHz with a transimpedance gain of 32 dB Ω. This is the first ECPD/HBT with flip-chip technology ever reported for OEIC.


    1. 1)
      • D. Huber , R. Bauknecht , C. Bergamaschi , M. Bitter , A. Huber , T. Morf , A. Neiger , M. Rohner , I. Schnyder , V. Schwarz , A. Jackel . InP–InGaAs single HBT technology for photoreceiver OEICs at 40 Gb/s and beyond. IEEE J. Lightwave Technol. Lett. , 992 - 1000
    2. 2)
    3. 3)
      • Jalali, B., Humphrey, D.A., Naval, L., Montgomery, R.K., Levi, A.F.J., Sivco, D., Dutta, N.K., Cho, A.Y.: `An edge-coupled receiver OEIC using AlInAs/InGaAs HBTs', Fifth Indium Phosphide and Related Materials Conf., p. 281–284.
    4. 4)
    5. 5)
    6. 6)
      • K. Hideki , M. Yoshiaki , M. Kenichi , I. Masaharu , O. Keiichi . The flip-chip bump interconnection for millimeter-wave GaAs MMIC. IEEE Trans. Electron. Packag. Manuf. , 23 - 28
    7. 7)
    8. 8)
      • A. Leven , V. Hurm , W. Bronner , K. Kohler , H. Walcher , R. Kiefer , J. Fieibner , J. Rosenzweig , M. Schleehtweg . 40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed anplifier. IEEE MTT-S Digest , 683 - 685
    9. 9)
    10. 10)
    11. 11)
      • E. Zakel , J. Gwiasda , J. Kloeser , J. Eldring , G. Engelmann , H. Reichl . Fluxless flip chip assembly on rigid and flexible polymer substrates using the Au–Sn metallurgy. 16th Electronics Manufacturing Technology Symp , 177 - 184
    12. 12)
    13. 13)
    14. 14)

Related content

This is a required field
Please enter a valid email address