Integration of periodic, sub-wavelength structures in silicon-on-insulator photonic device design

Yannick D'Mello; Orad Reshef; Santiago Bernal; Eslam El-fiky; Yun Wang; Maxime Jacques; David V. Plant

Integration of periodic, sub-wavelength structures in silicon-on-insulator photonic device design

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Author(s): Yannick D'Mello¹ ; Orad Reshef² ; Santiago Bernal¹ ; Eslam El-fiky^{1, 3} ; Yun Wang¹ ; Maxime Jacques¹ ; David V. Plant¹
- Affiliations: 1: Department of Electrical and Computer Engineering, McGill University , H3E 0E9, Montreal , Canada ;
  2: Department of Physics, University of Ottawa , K1N 6N5, Ottawa , Canada ;
  3: Department of Electrical Engineering, Alexandria University , 21544, Alexandria , Egypt
Source: Volume 14, Issue 3, June 2020, p. 125 – 135
DOI: 10.1049/iet-opt.2019.0077 , Print ISSN 1751-8768, Online ISSN 1751-8776

This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)

Received 07/06/2019, Accepted 03/02/2020, Revised 29/10/2019, Published 19/03/2020

Rapid advances in high-resolution chip lithography have accelerated nanophotonic device development on the silicon-on-insulator (SOI) platform. The ability to create sub-wavelength features in silicon has attracted research in photonic band and dispersion engineering and consequently made available a wide array of device functionalities. By drawing on recent demonstrations, the authors review how periodic, sub-wavelength structures are used for passive wave manipulation in SOI device design. The optical response is evaluated for both orthogonal polarisations at the telecom wavelengths of 1310 and 1550 nm. The results offer a versatile toolkit for the integration of these features in conventional nanophotonic device geometries. Notable benefits include a fine control of dispersion, wavelength and polarisation selectivity, and broadband performance.

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Integration of periodic, sub-wavelength structures in silicon-on-insulator photonic device design

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