Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

access icon free Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates

In this study, p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si. Atomic force microscopy and X-ray diffraction measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. Photoluminescence characterisation indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.

http://iet.metastore.ingenta.com/content/journals/10.1049/iet-opt.2017.0078
Loading

Related content

content/journals/10.1049/iet-opt.2017.0078
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address