This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)
GaAsBi light emitting diodes containing ∼6% Bi are grown on GaAs substrates. Good room-temperature electroluminescence spectra are obtained at current densities as low as 8 Acm − 2. Measurements of the integrated emitted luminescence suggest that there is a continuum of localised Bi states extending up to 75 meV into the bandgap, which is in good agreement with previous photoluminescence studies. X-ray diffraction analysis shows that strain relaxation has probably occurred in the thicker samples grown in this study.
References
-
-
1)
-
21. Potter, R.J., Balkan, N.: ‘Optical properties of GaNAs and GaInAsN quantum wells’, J. Phys., Condens. Matter, 2004, 16, (31), p. S3387 (doi: 10.1088/0953-8984/16/31/026).
-
2)
-
16. Mazur, Y.I., Dorogan, V.G., Benamara, M., et al: ‘Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures’, J. Phys. D, Appl. Phys., 2013, 46, (6), p. 065306 (doi: 10.1088/0022-3727/46/6/065306).
-
3)
-
3. Zhong, Y., Dongmo, P.B., Petropoulos, J.P., et al: ‘Effects of molecular beam epitaxy growth conditions on composition and optical properties of InxGa1−xBiyAs1−y’, Appl. Phys. Lett., 2012, 100, (11), p. 112110 (doi: 10.1063/1.3695066).
-
4)
-
14. Mohmad, A.R., Bastiman, F., Ng, J.S., et al: ‘Photoluminescence investigation of high quality GaAs1−xBix on GaAs’, Appl. Phys. Lett., 2011, 98, (12), p. 122107 (doi: 10.1063/1.3565244).
-
5)
-
22. Varshni, Y.P.: ‘Temperature dependence of the energy gap in semiconductors’, Physica, 1967, 34, (1), pp. 149–154 (doi: 10.1016/0031-8914(67)90062-6).
-
6)
-
1. Svensson, S.P., Hier, H., Sarney, W.L., et al: ‘Molecular beam epitaxy control and photoluminescence properties of InAsBi’, J. Vac. Sci. Technol. B, 2012, 30, (2), p. 02B109 (doi: 10.1116/1.3672023).
-
7)
-
10. Ludewig, P., Knaub, N., Hossain, N., et al: ‘Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser’, Appl. Phys. Lett., 2013, 102, (24), p. 242115 (doi: 10.1063/1.4811736).
-
8)
-
9. Hossain, N., Marko, I.P., Jin, S.R., et al: ‘Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes’, Appl. Phys. Lett., 2012, 100, (5), p. 051105 (doi: 10.1063/1.3681139).
-
9)
-
6. Broderick, C.A., Usman, M., Sweeney, S.J., et al: ‘Band engineering in dilute nitride and bismide semiconductor lasers’, Semicond. Sci. Technol., 2012, 27, (9), p. 094011 (doi: 10.1088/0268-1242/27/9/094011).
-
10)
-
12. Imhof, S., Thranhardt, A., Chernikov, A., et al: ‘Clustering effects in Ga(AsBi)’, Appl. Phys. Lett., 2010, 96, (13), p. 131115 (doi: 10.1063/1.3374884).
-
11)
-
13. Mohmad, A.R., Bastiman, F., Hunter, C.J., et al: ‘Localization effects and band gap of GaAsBi alloys’, Phys. Status Solidi B, 2014, 251, (6), pp. 1276–1281 (doi: 10.1002/pssb.201350311).
-
12)
-
7. Batool, Z., Hild, K., Hosea, T.J.C., et al: ‘The electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing’, J. Appl. Phys., 2012, 111, (11), p. 113108 (doi: 10.1063/1.4728028).
-
13)
-
15. Yoshimoto, M., Itoh, M., Tominaga, Y., et al: ‘Quantitative estimation of density of Bi-induced localized states in GaAs1−xBix grown by molecular beam epitaxy’, J. Cryst. Growth, 2013, 378, pp. 73–76 (doi: 10.1016/j.jcrysgro.2012.12.157).
-
14)
-
17. Mazur, Y.I., Dorogan, V.G., Schmidbauer, M., et al: ‘Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples’, J. Appl. Phys., 2013, 113, (14), p. 144308 (doi: 10.1063/1.4801429).
-
15)
-
23. Eliseev, P.G., Perlin, P., Lee, J., et al: ‘‘Blue’ temperature-induced shift and band-tail emission in InGaN-based light sources’, Appl. Phys. Lett., 1997, 71, (5), pp. 569–571 (doi: 10.1063/1.119797).
-
16)
-
5. Rajpalke, M.K., Linhart, W.M., Birkett, M., et al: ‘Growth and properties of GaSbBi alloys’, Appl. Phys. Lett., 2013, 103, (14), p. 142106 (doi: 10.1063/1.4824077).
-
17)
-
18. Buyanova, I.A., Chen, W.M., Pozina, G., et al: ‘Optical properties of GaNAs/GaAs structures’, Mater. Sci. Eng. B, 2001, 82, (1–3), pp. 143–147 (doi: 10.1016/S0921-5107(00)00669-3).
-
18)
-
11. Hunter, C.J., Bastiman, F., Mohmad, A.R., et al: ‘Absorption characteristics of GaAs1−xBix/GaAs diodes in the near-infrared’, IEEE Photonics Technol. Lett., 2012, 24, (23), pp. 2191–2194 (doi: 10.1109/LPT.2012.2225420).
-
19)
-
8. Lewis, R.B., Beaton, D.A., Lu, X., et al: ‘GaAs1−xBix light emitting diodes’, J. Cryst. Growth, 2009, 311, (7), pp. 1872–1875 (doi: 10.1016/j.jcrysgro.2008.11.093).
-
20)
-
4. Gu, Y., Wang, K., Zhou, H., et al: ‘Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy’, Nanoscale Res. Lett., 2014, 9, (1), p. 24 (doi: 10.1186/1556-276X-9-24).
-
21)
-
2. Feng, G., Oe, K., Yoshimoto, M.: ‘Bismuth containing III–V quaternary alloy InGaAsBi grown by MBE’, Phys. Status Solidi A, 2006, 203, (11), pp. 2670–2673 (doi: 10.1002/pssa.200669596).
-
22)
-
19. Hasbullah, N.F., Ng, J.S., Liu, H.Y., et al: ‘Dependence of the electroluminescence on the spacer layer growth temperature of multilayer quantum-dot laser structures’, IEEE J. Quantum Electron., 2009, 45, (1), pp. 79–85 (doi: 10.1109/JQE.2008.2002671).
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-opt.2015.0051
Related content
content/journals/10.1049/iet-opt.2015.0051
pub_keyword,iet_inspecKeyword,pub_concept
6
6