Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Parametric study of 1310 nm ridge waveguide AlGaInAs-InP semi-conductor laser dynamics

Parametric study of 1310 nm ridge waveguide AlGaInAs-InP semi-conductor laser dynamics

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IET Optoelectronics — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Dynamic performance of directly modulated Fabry–Pérot lasers is presented in this work subject to variation of parameters such as cavity length and facet reflectivity. This study is focused on the effect that physical parameters have on the slope of the laser resonance frequency against the square root of the injection current. Temperature variation is also studied to determine modulation bandwidth available for high speed device operation at 10 Gbps. The effect of facet reflectivity and temperature over the laser spectrum and wavelength is also discussed.

References

    1. 1)
      • 8. Coldren, L.A., Corzine, S.W.: ‘Dynamic effects’, in Chang, K. (Ed.): ‘Diode lasers and photonic integrated circuits’ (Wiley, USA, 1995, 1st edn.), pp. 241245.
    2. 2)
    3. 3)
    4. 4)
    5. 5)
      • 12. Agrawal, G.P., Dutta, N.K.: ‘Distributed-feedback semiconductor lasers’, in Mitra, S. (Ed.): ‘Long-wavelength semiconductor lasers’ (Van Nostrand Reinhold, USA, 1986, 1st edn.), pp. 314318.
    6. 6)
    7. 7)
    8. 8)
    9. 9)
      • 7. Yamamoto, T.: ‘High-speed directly modulated lasers’. Proc. Opt. Fiber Commun. Conf., Los Angeles, CA, USA, 2012, OTH3F5.
    10. 10)
    11. 11)
    12. 12)
    13. 13)
    14. 14)
    15. 15)
      • 9. Agrawal, G.P., Dutta, N.K.: ‘Recombination mechanisms in semiconductors’, in Mitra, S. (Ed.): ‘Long-wavelength semiconductor lasers’ (Van Nostrand Reinhold, USA, 1986, 1st edn.), pp. 8494.
    16. 16)
    17. 17)
    18. 18)
    19. 19)
      • 5. Williams, K.A., Penty, R.V., White, I.H., Silver, M.: ‘Requirements for uncooled direct laser modulation at 10 Gb/s’. Proc. SPIE 4287, In-Plane Semiconductor Lasers V, 2001, pp. 118127.
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-opt.2015.0011
Loading

Related content

content/journals/10.1049/iet-opt.2015.0011
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address