access icon free Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is studied. A significant improvement in photoemission, photocurrent density and spectral response was observed with post-growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from 4.9 mA cm−2 for as-grown sample to 5.8 mA cm−2. We assign this enhanced performance to the reduced density of inherent point defects that was formed at the quantum dot (QD) and GaAs barrier. Post-growth thermal annealing of QDSCs is demonstrated as a simple route for achieving improved device performance.

Inspec keywords: III-V semiconductors; photoemission; solar cells; semiconductor quantum dots; point defects; current density; indium compounds; rapid thermal annealing

Other keywords: QDSC; quantum dot solar cells; photocurrent density; temperature 700 degC; spectral response; rapid thermal annealing; post-growth thermal annealing; point defects; optimal anneal temperature; InAs-GaAs; current density; photoemission

Subjects: Photoelectric conversion; solar cells and arrays; Solar cells and arrays; Annealing processes; Annealing processes in semiconductor technology; Other point defects

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http://iet.metastore.ingenta.com/content/journals/10.1049/iet-opt.2014.0079
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