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access icon free Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

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      • 25. Fu, L., Kuffner, P., McKerracher, I., et al: ‘Rapid thermal annealing study of InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition’. Lasers and Electro-Optics Society, 2005. The 18th Annual Meeting of the IEEE, October 2005, pp. 228229.
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      • 23. Guo-Zhi, J., Jiang-hong, Y., Yong-chun, S., et al: ‘Evolution of InAs quantum dots during annealing process’, Acta Phys. Pol., 2008, 114, (4), pp. 919923.
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      • 26. Stewart, K., Buda, M., Fu, L., et al: ‘Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors’. Conf. of IEEE, Optoelectronic and Microelectronic Materials and Devices, December 2002, pp. 475478.
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