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Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

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The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is studied. A significant improvement in photoemission, photocurrent density and spectral response was observed with post-growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from 4.9 mA cm−2 for as-grown sample to 5.8 mA cm−2. We assign this enhanced performance to the reduced density of inherent point defects that was formed at the quantum dot (QD) and GaAs barrier. Post-growth thermal annealing of QDSCs is demonstrated as a simple route for achieving improved device performance.

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