Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates
- Author(s): Mingchu Tang 1 ; Jiang Wu 1 ; Siming Chen 1 ; Qi Jiang 1 ; Alwyn J. Seeds 1 ; Huiyun Liu 1 ; Vitaliy G. Dorogan 2 ; Mourad Benamara 2 ; Yuriy Mazur 2 ; Gregory Salamo 2
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View affiliations
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Affiliations:
1:
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
2: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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Affiliations:
1:
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
- Source:
Volume 9, Issue 2,
April 2015,
p.
61 – 64
DOI: 10.1049/iet-opt.2014.0078 , Print ISSN 1751-8768, Online ISSN 1751-8776
The authors report 1.3-μm InAs/GaAs quantum-dot (QD) lasers monolithically grown on a Si substrate by optimising the dislocation filter layers (DFLs). InAlAs/GaAs strained layer superlattices (SLSs) have been presented as DFLs in this study. A distinct improvement in the InAs/GaAs QDs was observed when using InAlAs/GaAs SLSs because of the effective filtering of threading dislocations. Consequently, a laser with a threshold current density of 194 A/cm2 at room temperature and an operating temperature as high as 85°C is successfully demonstrated. These results show the potential for integrating III–V QD materials on a Si platform via InAlAs/GaAs SLSs as DFL.
Inspec keywords: III-V semiconductors; optical filters; integrated optoelectronics; optical fabrication; micro-optics; semiconductor growth; current density; optimisation; silicon; semiconductor superlattices; aluminium compounds; gallium arsenide; indium compounds; quantum dot lasers
Other keywords: threshold current density; indium arsenide-gallium arsenide quantum-dot laser monolithically growth; indium aluminium arsenide-gallium arsenide strained layer superlattices; temperature 293 K to 298 K; InAlAs-GaAs; III-V QD material integration; dislocation filter layer optimisation; size 1.3 mum; InAs-GaAs; silicon substrates
Subjects: Semiconductor superlattices, quantum wells and related structures; Optical coatings and filters; II-VI and III-V semiconductors; Micro-optical devices and technology; Optimisation techniques; Semiconductor lasers; Design of specific laser systems; Lasing action in semiconductors; Spectral and other filters; Integrated optoelectronics; Micro-optical devices and technology; Optical fabrication, surface grinding
References
-
-
1)
-
3. Liang, D., Bowers, J.E.: ‘Recent progress in lasers on silicon’, Nat. Photonics, 2010, 4, (8), pp. 511–517 (doi: 10.1038/nphoton.2010.167).
-
-
2)
-
11. Wang, T., Liu, H., Lee, A., Pozzi, F., Seeds, A.: ‘1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates’, Opt. Express, 2011, 19, (12), pp. 11381–11386 (doi: 10.1364/OE.19.011381).
-
-
3)
- H. Rong , R. Jones , A. Liu , O. Cohen , D. Hak , A. Fang , M. Paniccia . A continuouswave Raman silicon laser. Nature , 725 - 727
-
4)
-
13. Liu, H., Wang, T., Jiang, Q., Hogg, R., Tutu, F.: ‘Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate’, Nat. Photonics, 2011, 5, (7), pp. 416–419 (doi: 10.1038/nphoton.2011.120).
-
-
5)
-
3. Michel, J., Liu, J., Kimerling, L.C.: ‘High-performance Ge-on-Si photodetector’, Nat. Photonics, 2010, 4, pp. 527–534 (doi: 10.1038/nphoton.2010.157).
-
-
6)
-
13. Nozawa, K., Horikoshi, Y.: ‘Low threading dislocation density GaAs on Si(100) with InGaAs/GaAs strained-layer superlattice grown by migration-enhanced epitaxy’, Jpn. J. Appl. Phys., 1991, 30, pp. 668–671 (doi: 10.1143/JJAP.30.L668).
-
-
7)
-
18. Georgakilas, A., Christou, A.: ‘Effects of InGaAs/GaAs strained-layer superlattices in optimized molecular beam epitaxy GaAs on Si with Si buffer layers’, J. Appl. Phys., 1994, 76, pp. 7332–7338 (doi: 10.1063/1.358023).
-
-
8)
-
4. Liu, A.Y., Zhang, C., Norman, J., Snyder, A., Lubyshev, D., Fastenau, J.M., Liu, A.W.K., Gossard, A.C., Bowers, J.E.: ‘High performance continuous wave 1.3 μm quantum dot lasers on silicon’, Appl. Phys. Lett., 2014, 104, p. 041104 (doi: 10.1063/1.4863223).
-
-
9)
-
14. Lee, A., Jiang, Q., Tang, M., Seeds, A., Liu, H.: ‘Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities’, Opt. Express, 2012, 20, (20), p. 22181 (doi: 10.1364/OE.20.022181).
-
-
10)
-
12. Nakamura, S., Senoh, M., Nagahama, S., et al: ‘InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate’, Appl. Phys. Lett., 1998, 72, pp. 211–0 (doi: 10.1063/1.120688).
-
-
11)
-
13. Chen, S., Tang, M., Jiang, Q., Wu, J., Dorogan, V.G., Benamara, M., Mazur, Y.I., Salamo, G.J., Smowton, P., Seeds, A., Liu, H.: ‘InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate’, ACS Photonics., 2014, 1, (7), pp. 638–642 (doi: 10.1021/ph500162a).
-
-
12)
-
2. Headley, W.R., Reed, G.T., Howe, S., Paniccia, M., Liu, A.: ‘Polarization-independent optical racetrack resonators using rib waveguide on silicon on insulator’, Appl. Phys. Lett., 2004, 85, pp. 5523–5525 (doi: 10.1063/1.1827337).
-
-
13)
-
16. Wu, J., Lee, A., Jiang, Q., Tang, M., Seeds, A., Liu, H.: ‘Electrically pumped continuous-wave 1.3-µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates’, IET Optoelectronics, 2014, 8, (2), pp. 20–24.
-
-
14)
-
6. Yang, J., Bhattacharya, P., Mi, Z.: ‘High-performance In0.5Ga0.5As/GaAs quantum-dot lasers on silicon with multiple-layer quantum-dot dislocation filters’, IEEE Trans. Electron. Devices, 2007, 54, pp. 2849–2855 (doi: 10.1109/TED.2007.906928).
-
-
15)
-
12. Tang, M., Chen, S., Wu, J., Jiang, Q., Dorogan, V.G., Benamara, M., Mazur, Y.I., Salamo, G.J., Seeds, A., Liu, H.: ‘1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers’, Opt. Express, 2014, 22, (10), pp. 11528–11535 (doi: 10.1364/OE.22.011528).
-
-
16)
- V.M. Ustinov , A.E. Zhukow . GaAs-based long-wavelength lasers. Semicond. Sci. Technol.
-
17)
-
1. Dong, P., Liao, S., Liang, H., et al: ‘High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltage’, Opt. Lett., 2010, 35, (19), pp. 3246–3248 (doi: 10.1364/OL.35.003246).
-
-
18)
- H.Y. Liu , M. Hopkinson , C.N. Harrison , M.J. Steer , R. Frith , I.R. Sellers , D.J. Mowbray , M.S. Skolnick . Optimizing the growth of 1.3 µm InAs/InGaAs dots-in-a-well structure. J. Appl. Phys. , 2931 - 2936
-
19)
-
11. Wang, T., Lee, A., Tutu, F., et al: ‘The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quatum dots monolithically grown on Ge substrate’, Appl. Phys. Lett., 2014, 100, pp. 052113–0 (doi: 10.1063/1.3682314).
-
-
20)
-
19. Yamaguchi, M., Nishioka, T., Sugo, M.: ‘Analysis of strained-layer superlattice effects on dislocation density reduction in GaAs on Si substrates’, Appl. Phys. Lett., 1989, 54, pp. 24–26 (doi: 10.1063/1.100819).
-
-
1)