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access icon free Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

The authors report 1.3-μm InAs/GaAs quantum-dot (QD) lasers monolithically grown on a Si substrate by optimising the dislocation filter layers (DFLs). InAlAs/GaAs strained layer superlattices (SLSs) have been presented as DFLs in this study. A distinct improvement in the InAs/GaAs QDs was observed when using InAlAs/GaAs SLSs because of the effective filtering of threading dislocations. Consequently, a laser with a threshold current density of 194 A/cm2 at room temperature and an operating temperature as high as 85°C is successfully demonstrated. These results show the potential for integrating III–V QD materials on a Si platform via InAlAs/GaAs SLSs as DFL.

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      • 16. Wu, J., Lee, A., Jiang, Q., Tang, M., Seeds, A., Liu, H.: ‘Electrically pumped continuous-wave 1.3-µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates’, IET Optoelectronics, 2014, 8, (2), pp. 2024.
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http://iet.metastore.ingenta.com/content/journals/10.1049/iet-opt.2014.0078
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content/journals/10.1049/iet-opt.2014.0078
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