Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer
Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer
- Author(s): S. Li ; D.S. Kuo ; C.H. Liu ; S.C. Hung ; S.J. Chang
- DOI: 10.1049/iet-opt.2012.0019
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- Author(s): S. Li 1 ; D.S. Kuo 2 ; C.H. Liu 3 ; S.C. Hung 4 ; S.J. Chang 1, 2
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View affiliations
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Affiliations:
1: College of Science, China University of Petroleum (East China), Qingdao, People's Republic of China
2: Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan, Taiwan
3: Department of Electronic Engineering, Nan Jeon Institute of Technology, Yanshui, Taiwan
4: Department of Information Technology and Communication, Shih Chien University, Kaohsiung, Taiwan
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Affiliations:
1: College of Science, China University of Petroleum (East China), Qingdao, People's Republic of China
- Source:
Volume 6, Issue 6,
December 2012,
p.
303 – 306
DOI: 10.1049/iet-opt.2012.0019 , Print ISSN 1751-8768, Online ISSN 1751-8776
The authors propose a simple direct wet etching method to texture the indium-tin-oxide (ITO) p-contact layer of GaN-based light-emitting diodes (LEDs). It was found that high density ITO nanorods with average diameter of 140 nm and average height of 120 nm were formed after the LED samples were immersed in a solution consists of HCl (30%), FeCl3 (30%) and de-ionised water (40%) for 2 min at room temperature. It was also found that output power of the LEDs with 2 min direct wet etching was 21% higher than that of conventional LEDs. Furthermore, it was found that such enhancement should be attributed to the enhanced photon extraction from the front surface of the LED chip.
Inspec keywords: III-V semiconductors; indium compounds; gallium compounds; light emitting diodes; wide band gap semiconductors; nanorods; etching
Other keywords:
Subjects: Surface treatment (semiconductor technology); Light emitting diodes
References
-
-
1)
- S.J. Chang , W.C. Lai , Y.K. Su , J.F. Chen , C.H. Liu , U.H. Liaw . InGaN–GaN multiquantum well blue and green light emitting diodes. IEEE J. Select. Topics Quantum Electron. , 278 - 283
-
2)
- S.J. Chang , L.W. Wu , Y.K. Su , Y.P. Hsu , W.C. Lai , J.M. Tsai , J.K. Sheu , C.T. Lee . Nitride-based LEDs with 800°C grown p-AlInGaN–GaN double-cap layers. IEEE Photonics Technol. Lett. , 1447 - 1449
-
3)
- E.F. Schubert , J.K. Kim . Solid-state light sources getting smart. Science , 1274 - 1278
-
4)
- S.J. Chang , C.F. Shen , W.S. Chen . Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography. Appl. Phys. Lett.
-
5)
- S.J. Chang , C.H. Kuo , Y.K. Su , L.W. Wu , J.K. Sheu , T.C. Wen , W.C. Lai , J.F. Chen , J.M. Tsai . 400 nm InGaN–GaN and InGaN–AlGaN multiquantum well light-emitting diodes. IEEE J. Select. Topics Quantum Electron. , 744 - 748
-
6)
- J.H. Kang , H.G. Kim , H.K. Kim . Improvement of light output power in InGaN/GaN LEDs with a nanotextured GaN surface using indium tin oxide nanospheres. Japan. J. Appl. Phys.
-
7)
- Y.C. Shin , D.H. Kim , D.J. Chae . Effects of nanometer-scale photonic crystal structures on the light extraction from GaN light-emitting diodes. IEEE J. Quantum. Electron. , 1375 - 1380
-
8)
- S. Nakamura , T. Mukai , M. Senoh . Candela-class high brightness InGaN/AlGaN double heterostructure blue light emitting diodes. Appl. Phys. Lett. , 13 , 1687 - 1689
-
9)
- S.J. Chang , C.H. Chen , P.C. Chang , Y.K. Su , P.C. Chen , Y.D. Jhou , H. Hung , C.M. Wang , B.R. Huang . Nitride-based LEDs with p-InGaN capping layer. IEEE Trans. Electron. Dev. , 2567 - 2570
-
10)
- J.E.A.M. van den Meerakker , P.C. Baarslag , M. Scholten . On the mechanism of ITO etching in halogen acids: the influence of oxidizing agents. J. Electrochem. Soc. , 2321 - 2325
-
11)
- D.S. Leem , J. Cho , C. Sone , Y. Park , T.Y. Seong . Light output enhancement of GaN-based light-emitting diodes by using hole patterned transparent indium tin oxide. J. Appl. Phys.
-
12)
- C. Liao , Y.S. Wu . InGaN-GaN light emitting diode performance improved by roughening indium tin oxide window layer via natural lithography. Electrochem. Solid-State Lett. , J8 - J10
-
13)
- M. Scholten , J.E.A.M. van den Meerakker . On the mechanism of ITO etching: the specificity of halogen acids. J. Electrochem. Soc. , 471 - 475
-
14)
- R.-H. Horng , S.-H. Huang , C.-C. Yang , D.-S. Wuu . Efficiency improvement of GaN-based LEDs with ITO texturing window layers using natural lithography. IEEE J. Sel. Top. Quantum Electron. , 6 , 1196 - 1201
-
15)
- S.J. Chang , C.S. Chang , Y.K. Su , R.W. Chuang , Y.C. Lin , S.C. Shei , H.M. Lo , H.Y. Lin , J.C. Ke . Highly reliable nitride-based LEDs with SPS+ITO upper contacts. IEEE J. Quantum Electron. , 1439 - 1443
-
16)
- K.J. Byeon , H.W. Park , J.Y. Cho . Fabrication of photonic crystal structure on indium tin oxide electrode of GaN-based light-emitting diodes. Phys. Status Solidi (a) , 480 - 483
-
17)
- J.H. Kang , H.G. Kim , J.H. Ryu . Enhancement of light output power in InGaN/GaN LEDs with nanoroughed hemispherical indium tin oxide transparent ohmic contacts. Electrochem. Solid-State Lett. , D1 - D3
-
18)
- T. Fujii , Y. Gao , R. Sharma , E.L. Hu , S.P. DenBaars , S. Nakamura . Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl. Phys. Lett. , 6 , 855 - 857
-
1)