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GaN-based light-emitting diodes with a thermally stable mirror structure underneath an insulating SiO2 layer

GaN-based light-emitting diodes with a thermally stable mirror structure underneath an insulating SiO2 layer

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This study reports the development of GaN-based light-emitting diodes (LEDs) with Ni/Ag (1 nm±0.2 nm/100 nm±2 nm) layers underneath an insulating layer of SiO2. The results of this study confirm the thermal stability of a Ni/Ag mirror with reflectance of 90.6±1.5% following thermal annealing at 500°C for 5 min. This approach achieves far superior current spreading and prevents the absorption of light through the use of an opaque p-pad electrode. With 20-mA current injection, the output power of the LED with SiO2/Ni/Ag layers was 6.5 and 12.1% greater than that of LEDs with and without a SiO2 layer, respectively. Furthermore, the 20-mA forward voltage increased only slightly from 3.03±0.01 to 3.05±0.01 V for LEDs with SiO2/Ni/Ag layers. Good reliability is also achieved for LEDs with SiO2/Ni/Ag layers.

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http://iet.metastore.ingenta.com/content/journals/10.1049/iet-opt.2011.0075
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