Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Strain engineered bilayers for extending the operating wavelength of quantum dot lasers

Strain engineered bilayers for extending the operating wavelength of quantum dot lasers

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IET Optoelectronics — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The analysis of molecular-beam epitaxy (MBE) grown bilayer quantum dot (QD) laser material is reported here. Specifically, gain characteristics of 5× ‘bilayer’ QDs with GaAs caps and 5× ‘single’ QD layers with InGaAs caps were studied experimentally. A transition of lasing from the ground state to lasing via the first excited state, and subsequently the second excited state is observed with increasing threshold gain for both the laser structures. A 50% increase in saturated modal gain is observed for bilayer laser as compared to single-layer samples. Further analysis of the bilayer sample using the multi-section technique allows the gain and absorption spectrum to be obtained.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
      • G.H.B. Thompson . (1980) Physics of semiconductor laser devices.
    8. 8)
    9. 9)
      • L.A. Coldren , S.W. Corzine . (1995) Diode lasers and photonic integrated circuits.
    10. 10)
    11. 11)
    12. 12)
    13. 13)
    14. 14)
    15. 15)
      • K. Matsuda , K. Ikeda , T. Saiki , H. Tsuchiya , H. Saito , K. Nishi . Homogeneous linewidth broadening in a InGaAs/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope. Phys. Rev. B. , 121304 - 121301
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-opt.2010.0041
Loading

Related content

content/journals/10.1049/iet-opt.2010.0041
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address