RF linewidth of a monolithic quantum dot mode-locked laser under resonant feedback
RF linewidth of a monolithic quantum dot mode-locked laser under resonant feedback
- Author(s): C.-Y. Lin ; F. Grillot ; N.A. Naderi ; Y. Li ; J.H. Kim ; C.G. Christodoulou ; L.F. Lester
- DOI: 10.1049/iet-opt.2010.0039
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- Author(s): C.-Y. Lin 1 ; F. Grillot 1, 2 ; N.A. Naderi 1 ; Y. Li 1 ; J.H. Kim 3 ; C.G. Christodoulou 3 ; L.F. Lester 1
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View affiliations
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Affiliations:
1: Center for High Technology Materials, University of New Mexico, Albuquerque, USA
2: Laboratoire CNRS FOTON, INSA, Université Européenne de Bretagne, Rennes, France
3: Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, USA
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Affiliations:
1: Center for High Technology Materials, University of New Mexico, Albuquerque, USA
- Source:
Volume 5, Issue 3,
June 2011,
p.
105 – 109
DOI: 10.1049/iet-opt.2010.0039 , Print ISSN 1751-8768, Online ISSN 1751-8776
The stability of a quantum dot (QD) mode-locked laser is experimentally shown to bifurcate under resonant optical feedback, which leads to either a reduction or an enhancement of the noise within the laser's cavity. These two behaviours, which are theoretically known as the nearly exact resonant and stably resonant feedback conditions, are characterised using the RF linewidth of the QD device. Under the stably resonant case with relatively low feedback strength and constant temperature control, the RF linewidth narrows to a value as low as 170 Hz. Noise enhancement, which is a precursor to coherence collapse, is observed in the device under the nearly exact resonant case. Under proper conditions, the results presented show that the combination of external optical feedback and the relatively low threshold of QD mode-locked lasers make them attractive chip-scale sources for ultra-low noise photonic applications.
Inspec keywords: bifurcation; quantum dot lasers; laser mode locking; integrated optics; monolithic integrated circuits; microwave photonics; integrated optoelectronics; spectral line narrowing; laser noise; laser feedback; indium compounds; gallium arsenide; III-V semiconductors; laser cavity resonators
Other keywords:
Subjects: Lasing action in semiconductors; Microwave photonics; Laser resonators and cavities; Laser resonators and cavities; Integrated optics; Design of specific laser systems; Semiconductor lasers; Integrated optoelectronics; Laser beam modulation, pulsing and switching; mode locking and tuning; Optical chaos and related effects; Integrated optics; Laser beam modulation, pulsing and switching; mode locking and tuning
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