Optimisation of 660 nm high-power tapered diode lasers
Optimisation of 660 nm high-power tapered diode lasers
- Author(s): C. Kaspari ; G. Blume ; D. Feise ; K. Paschke ; G. Erbert ; M. Weyers
- DOI: 10.1049/iet-opt.2010.0034
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- Author(s): C. Kaspari 1 ; G. Blume 2 ; D. Feise 2 ; K. Paschke 2 ; G. Erbert 2 ; M. Weyers 3
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View affiliations
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Affiliations:
1: LayTec AG, Berlin, Germany
2: Department of Optoelectronics, Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany
3: Department of Material Science, Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany
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Affiliations:
1: LayTec AG, Berlin, Germany
- Source:
Volume 5, Issue 3,
June 2011,
p.
121 – 127
DOI: 10.1049/iet-opt.2010.0034 , Print ISSN 1751-8768, Online ISSN 1751-8776
Tapered diode lasers in the red spectral range with nearly diffraction-limited output are prospective light sources for display applications and analytic methods such as fluorescence microscopy. The authors have studied the influence of the number of quantum wells and the lateral design of 660 nm high-power tapered diode lasers on the output power and the beam quality. From these investigations the authors have developed an optimised design and achieved a record output power of 1.5 W with a beam quality close to the diffraction limit (M2(1/e2)=1.5). The authors also demonstrate operation over 4500 h at power levels between 0.5 and 1.0 W.
Inspec keywords: aluminium compounds; optical design techniques; light diffraction; light sources; quantum well lasers; gallium compounds; indium compounds; optimisation; III-V semiconductors
Other keywords:
Subjects: Design of specific laser systems; Lasing action in semiconductors; Optical sources and standards; Semiconductor lasers
References
-
-
1)
- Opnext Datasheet HL63133DG, http://www.opnext.com/products/pdf/ode2_071_hl63133dg_Rev1.pdf, 2009.
-
2)
- R. Häring , B. Sumpf , G. Erbert . 670 nm semiconductor lasers for Lithium spectroscopy with 1 W. Proc. SPIE – Int. Soc. Opt. Engng. , 648516 - 648511
-
3)
- M. Zorn , H. Wenzel , U. Zeimer . High-power red laser diodes grown by MOVPE. J. Cryst. Growth , 667 - 671
-
4)
- B. Sumpf , H. Wenzel , G. Erbert . High-power, high-brightness semiconductor tapered diode lasers for the red and near infrared spectral range. Proc. SPIE – Int. Soc. Opt. Engng. , 7616 - 7657
-
5)
- P. Ressel , G. Erbert , U. Zeimer . Novel passivation process for the mirror facets of Al-free active-region high power semiconductor diode lasers. Photon. Technol. Lett. , 962 - 964
-
6)
- M. Mikulla , P. Chazan , A. Schmitt , S. Morgott , A. Wetzel , M. Walther , R. Kiefer , W. Pletschen , J. Braunstein , G. Weimann . High-brightness tapered semiconductor laser oscillator and amplifiers with low-modal gain epilayer-structures. IEEE Photonics Technol. Lett. , 5 , 654 - 656
-
7)
- B. Sumpf , G. Erbert , J. Fricke . 670 nm tapered lasers and amplifiers with output powers P>1 W and nearly diffraction limited beam quality. Novel In-plane Semiconductor Lasers VI – Proc. SPIE , 648517 - 648511
-
8)
- B. Pezeshki , M. Hagberg , B. Lu . High-power and diffraction-limited red lasers. Proc. SPIE – Int. Soc. Opt. Engng. , 80 - 90
-
9)
- T.Q. Tien , M. Maiwald , B. Sumpf , G. Erbert , G. Tränkle . Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality. Opt. Lett. , 2692 - 2694
-
10)
- B. Lu , J.S. Osinski , E. Vail . High power 635 nm low-divergence ridge waveguide singlemode lasers. Electron. Lett. , 272 - 273
-
11)
- P. Adamiec , B. Sumpf , D. Feise . Twin-contact 645-nm tapered laser with 500-mW output power. IEEE Photon. Technol. Lett. , 236 - 239
-
12)
- T. Schmitt , A. Able , R. Häring . cw, 325 nm, 100 mW semiconductor laser system as potential substitute for HeCd gas lasers. Proc. SPIE – Int. Soc. Opt. Engng. , 687610 - 687611
-
13)
- M.T. Kelemen , J. Weber , S. Kallenbach . Astigmatism and beam quality of high-brightness tapered diode lasers. Proc. SPIE – Int. Soc. Opt. Engng. , 233 - 243
-
14)
- D. Feise , G. Blume , H. Dittrich . High-brightness 635 nm tapered diode lasers with optimized index guiding. Proc. SPIE – Int. Soc. Opt. Engng. , 75830V - 758301
-
15)
- P. Adamiec , B. Sumpf , I. Rüdiger . Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality. Opt. Lett. , 2456 - 2458
-
16)
- Lindner, N., Butendeich, R., Karnutsch, C.: `900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm', paper CMJ1, Conf. Lasers and Electro-Optics 2004, 2004.
-
17)
- B. Lu , J.S. Osinski , R.J. Lang . 400 mW continuous-wave diffraction limited flared unstable resonator laser diode at 635 nm. Electron. Lett. , 1633 - 1664
-
18)
- G.C. Dente . Low confinement factors for suppressed filaments in semiconductor lasers. IEEE J. Quant. Electron. , 1650 - 1653
-
1)
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