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The authors simulate both conventional and doping superlattice GaInNAs solar cells. They show that for a conventional cell with 1 µm diffusion lengths the maximum possible efficiency is approximately 9.5% and for 0.1 µm diffusion lengths it is 6.5% as the device must be relatively thin. Doping superlattice structures with varying number of layers and different layer thicknesses are simulated to find the design which yields the highest efficiency. A high number of thin layers allow a high percentage of incident photons to be absorbed, and carrier separated increasing the short-circuit currents leading to efficiencies close to 12%.
Inspec keywords: semiconductor doping; III-V semiconductors; diffusion; indium compounds; solar cells; gallium compounds; superlattices
Other keywords:
Subjects: Semiconductor doping; Doping and implantation of impurities; II-VI and III-V semiconductors; Diffusion and ionic conduction in solids; Photoelectric conversion; solar cells and arrays; Crystal structure of specific inorganic compounds