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The authors simulate both conventional and doping superlattice GaInNAs solar cells. They show that for a conventional cell with 1 µm diffusion lengths the maximum possible efficiency is approximately 9.5% and for 0.1 µm diffusion lengths it is 6.5% as the device must be relatively thin. Doping superlattice structures with varying number of layers and different layer thicknesses are simulated to find the design which yields the highest efficiency. A high number of thin layers allow a high percentage of incident photons to be absorbed, and carrier separated increasing the short-circuit currents leading to efficiencies close to 12%.
References
-
-
1)
-
A. Lindsay ,
E.P. O'Reilly
.
Theory of enhanced bandgap non-parabolicity in GaNAs and related alloys.
Solid State Commun.
,
443 -
447
-
2)
-
Friedman, D.J., Kurtz, S.R., Ptak, A.J., Geisz, J.F.: `Analysis of depletion-region collection in GaInNAs solar cells', Conf. Record IEEE Photovoltaic Specialists Conf., 2005, 31, p. 691–694.
-
3)
-
G.H. Döhler
.
The physics and applications of n–i–p–i doping superlattices.
Crit. Rev. Solid State Mater. Sci.
,
2 ,
97 -
141
-
4)
-
A. Kaschner ,
T. Lüttgert ,
H. Born ,
A. Hoffmann ,
A.Y. Egorov ,
H. Riechert
.
Recombination mechanisms in GaInNAs/GaAs multiple quantum wells.
Appl. Phys. Lett.
,
1391 -
1393
-
5)
-
R.R. King ,
C.C. Law ,
K.M. Edmondson
.
40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells.
J. Appl. Phys.
-
6)
-
G.F. Geisz ,
D.J. Friedman ,
J.M. Olson ,
S.R. Kurtz ,
J.M. Olson
.
Photocurrent of 1 eV GaInNAs lattice-matched to GaAs.
J. Crystal Growth
,
1 ,
409 -
415
-
7)
-
D.J. Friedman ,
J.F. Geisz ,
S.R. Kurtz ,
J.M. Olson
.
1-eV solar cells with GaInNAs active layer.
J. Crystal Growth
,
409 -
415
-
8)
-
R.J. Kaplar ,
S.A. Ringel ,
S.R. Kurtz ,
J.F. Klem ,
A.A. Allerman
.
Deep-level defects in InGaAsN grown by molecular-beam epitaxy.
Appl. Phys. Lett.
,
22 ,
1 -
4
-
9)
-
M. Kondow ,
T. Kitatani ,
S. Nakatsuka
.
GaInNAs: a novel material for long wavelength semiconductor lasers.
IEEE J. Sel. Top. Quantum Electron.
-
10)
-
H.J. Hovel
.
(1975)
Semiconductors and semimetals, Volume 11: solar cells.
-
11)
-
Wagner, M., Leburton, J.P.: `Superstructures and multijunction cells for high efficiency energy conversion', Conf. Record 18th Photovoltaic Specialist Conf., 1985, p. 157–160.
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