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Simulation of dilute nitride GaInNAs doping superlattice solar cells

Simulation of dilute nitride GaInNAs doping superlattice solar cells

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The authors simulate both conventional and doping superlattice GaInNAs solar cells. They show that for a conventional cell with 1 µm diffusion lengths the maximum possible efficiency is approximately 9.5% and for 0.1 µm diffusion lengths it is 6.5% as the device must be relatively thin. Doping superlattice structures with varying number of layers and different layer thicknesses are simulated to find the design which yields the highest efficiency. A high number of thin layers allow a high percentage of incident photons to be absorbed, and carrier separated increasing the short-circuit currents leading to efficiencies close to 12%.

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