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access icon free Active cold load MMICs for Ka-, V-, and W-bands

Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than −19 dB for all designs.

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http://iet.metastore.ingenta.com/content/journals/10.1049/iet-map.2014.0243
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