Fabrication and characterisation of Al gate n-metal–oxide–semiconductor field-effect transistor, on-chip fabricated with silicon nitride ion-sensitive field-effect transistor

Rekha Chaudhary; Amit Sharma; Soumendu Sinha; Jyoti Yadav; Rishi Sharma; Ravindra Mukhiya; Vinod K. Khanna

Fabrication and characterisation of Al gate n-metal–oxide–semiconductor field-effect transistor, on-chip fabricated with silicon nitride ion-sensitive field-effect transistor

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Author(s): Rekha Chaudhary ¹ ; Amit Sharma ¹ ; Soumendu Sinha ^{1, 2} ; Jyoti Yadav ¹ ; Rishi Sharma ^{1, 2} ; Ravindra Mukhiya ^{1, 2} ; Vinod K. Khanna ^{1, 2}
- Affiliations: 1: CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan, India ;
  2: Academy of Scientific and Innovative Research (AcSIR), New Delhi, India
Source: Volume 10, Issue 5, September 2016, p. 268 – 272
DOI: 10.1049/iet-cdt.2015.0174 , Print ISSN 1751-8601, Online ISSN 1751-861X

Received 09/10/2015, Accepted 18/02/2016, Revised 22/01/2016, Published 01/09/2016

In the present study, temperature drift analysis of metal–oxide–semiconductor field-effect transistor (MOSFET) is carried out using silicon nitride/SiO₂ as dielectric film. An n-channel depletion-mode MOSFET was fabricated with silicon nitride ion-sensitive field-effect transistor (ISFET) on the same wafer. The study presents the fabrication, simulation and characterisation of MOSFET. The gate of the ISFET is stacked with silicon nitride/SiO₂ sensing membrane that was deposited using low pressure chemical vapour deposition. Output and transfer characteristics of on-chip fabricated Al gate MOSFET were obtained in order to study the fabricated ISFET behaviour to be used as pH sensor. Silicon nitride is preferred over SiO₂ sensing film/dielectric (in case of MOSFET) which has better sensitivity and low drift. Process and device simulations were performed using Silvaco® TCAD tool.

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Fabrication and characterisation of Al gate n-metal–oxide–semiconductor field-effect transistor, on-chip fabricated with silicon nitride ion-sensitive field-effect transistor

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