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In this study, the authors propose non-conventional phase-change memory programming schemes using a comprehensive model, which integrates the underlying electrical and thermal theories. Various pulsing schemes aiming to reduce operation power without compromising performance are assessed based on a calibrated model. Our results suggest that optimisation of power consumption can be done simply by design of pulsing techniques.
References
-
-
1)
-
Liao, Y.B., Lin, J.T., Chiang, M.H., Hsu, W.C.: `Assessment of novel phase change memory programming techniques', Proc. Int. Conf. Electron Devices and Solid State Circuits, December 2008, p. 1–4.
-
2)
-
Chao, D.S., Hsu, H.H., Chen, M.J.: `Low programming current phase change memory cell with double GST thermally confined structure', Proc. Int. Symp. VLSI Technology System and Applications, April 2007, p. 1–2.
-
3)
-
A. Redaelli ,
A. Pirovano ,
A. Benventui ,
A.L. Lacaita
.
Threshold switching and phase transition numerical models for phase change memory simulations.
J. Appl. Phys.
,
11
-
4)
-
Liao, Y.B., Chen, Y.K., Chiang, M.H.: `An analytical compact PCM model accounting for partial crystallization', Proc. Int. Conf. Electron Devices and Solid-State Circuit, December 2007, p. 625–628.
-
5)
-
S. Senkader ,
C.D. Wright
.
Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices.
J. Appl. Phys.
,
2 ,
504 -
511
-
6)
-
Liao, Y.B., Chen, Y.K., Chiang, M.H.: `Phase change memory modeling using Verilog-A', Proc. Int. Behavioral Modeling and Simulation Workshop, September 2007, p. 159–164.
-
7)
-
Atwood, G., Bez, R.: `Current status of chalcogenide phase change memory', Device Research Conf. Digest, June 2005, p. 29–33.
-
8)
-
Wang, W.H., Chao, D.S., Chen, Y.C.: `Novel T shape structure PCM and electrical-thermal characteristics', Proc. VLSI Technology Systems and Applications, April 2006, p. 1–2.
-
9)
-
‘International technology roadmap for semiconductors’, 2007 edition [Online]. Available: http://www.itrs.net/.
-
10)
-
R.A. Cobley ,
C.D. Wright
.
Parameterized SPICE model for a phase-change RAM device.
IEEE Trans. Electron Devices
,
1 ,
112 -
118
-
11)
-
Y.T. Kim ,
Y.N. Hwang ,
K.H. Lee
.
Programming characteristics of phase change random access memory using phase change simulations.
Jpn. J. Appl. Phys.
,
2701 -
2705
-
12)
-
D.H. Kim ,
F. Merget ,
M. Laurenzis ,
P. Haring ,
H. Kurz
.
Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition.
J. Appl. Phys.
,
8
-
13)
-
Lacaita, A.L.: `Physics and performance of phase change memories', Proc. Int. Conf. Simulation of Semiconductor Processes and Devices, September 2005, p. 267–270.
-
14)
-
Mohammad, M.G., Terkawi, L., Albasman, M.: `Phase change memory faults', Proc. Int. Conf. VLSI Design Held Jointly with Embedded System and Design, January 2006, p. 108–113.
-
15)
-
Liao, Y.B., Lin, J.T., Chiang, M.H.: `Temperature-based phase change memory model for pulsing scheme assessment', Proc. Int. Conf. Integrated Circuit Design and Technology, June 2008, p. 119–202.
-
16)
-
X.Q. Wei ,
L.P. Shi ,
R. Walia
.
HSPICE Macromodel of PCRAM for binary and multilevel storage.
IEEE Trans. Electron Devices
,
1 ,
56 -
62
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