Non-volatile run-time field-programmable gate arrays structures using thermally assisted switching magnetic random access memories

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Non-volatile run-time field-programmable gate arrays structures using thermally assisted switching magnetic random access memories

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This study describes the integration of thermally assisted switching magnetic random access memories (TAS-MRAMs) in field-programmable gate array (FPGA) design. The non-volatility is achieved through the use of magnetic tunnelling junctions (MTJs) in an MRAM cell. A TAS scheme is used to write data in the MTJ device, which helps to reduce power consumption during a write operation in comparison with the conventional writing scheme used in MTJ devices. Furthermore, the non-volatility allows reducing both power consumption and configuration time required at each power-up of the circuit in comparison with classical static random access memory-based FPGAs. An innovative architecture furthermore provides run-time reconfigurable (RTR) support at minimum area overhead. A RTR FPGA element using TAS-MRAM allows dynamic reconfiguration mechanisms, while featuring simple design architecture.

Inspec keywords: field programmable gate arrays; MRAM devices; magnetic tunnelling; logic design

Other keywords: switching magnetic random access memories; run time reconfigurable support; magnetic tunnelling junctions; nonvolatility; field programmable gate arrays structures; MRAM cell

Subjects: Storage on stationary magnetic media; Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices; Logic design methods; Logic circuits; Logic and switching circuits; Digital circuit design, modelling and testing

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