Noise optimised charge-sensitive CMOS amplifier for capacitive radiation detectors

T. Noulis; S. Siskos; G. Sarrabayrouse

Noise optimised charge-sensitive CMOS amplifier for capacitive radiation detectors

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Noise optimised charge-sensitive CMOS amplifier for capacitive radiation detectors

Author(s): T. Noulis ; S. Siskos ; G. Sarrabayrouse
DOI: 10.1049/iet-cds:20070223

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Author(s): T. Noulis ¹ ; S. Siskos ¹ ; G. Sarrabayrouse ²
- Affiliations: 1: Electronics Laboratory of Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece
  2: Laboratoire d' Analyse et d' Architecture des Systèmes LAAS–CNRS, University of Toulouse, Toulouse, France
Source: Volume 2, Issue 3, June 2008, p. 324 – 334
DOI: 10.1049/iet-cds:20070223 , Print ISSN 1751-858X, Online ISSN 1751-8598

Published

A low-voltage, low-noise, charge-sensitive preamplifier (CSA) for particle tracking using a silicon strip detector was designed. The preamplifier was optimised in terms of the total output noise performance using a noise minimisation technique based on the MOSFET noise small signal equivalent circuit and readout front-end noise optimisation criteria valid in the strong inversion region. The preamplifier was designed and fabricated in a 0.35 µm CMOS process by Austria Mikro Systeme for a specific silicon strip detector of 2 pF capacitance for X-ray spectroscopy. The circuit exhibits satisfactory performance compatible to the specific low-energy radiation detection application. Particularly, the CSA provides an equivalent noise charge of 254 e⁻+13.5 e⁻/pF, consumes 165 µW and achieves an output conversion gain equal to 2.81 mV/fC and a linearity <0.57%. Analysis is supported by extensive measurement results confirming the circuit characteristics and their flexibility to be used in a variety of readout applications.

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Noise optimised charge-sensitive CMOS amplifier for capacitive radiation detectors

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