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Silicon-on-insulator for high-temperature applications

Silicon-on-insulator for high-temperature applications

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Published

The silicon-on-insulator (SOI) CMOS technology is one of the best candidates for high-temperature applications due to its low leakage current, steep subthreshold slope, absence of latch-up phenomenon and temperature‐resistant threshold voltage. However, the most critical elements for high temperature applications are transmission lines, especially thin-film microstrip lines. In the paper, the impact of high-temperature operation on the RF performance of some SOI circuits is analysed up to 250°C.

Inspec keywords: CMOS integrated circuits; silicon-on-insulator

Other keywords: thin-film microstrip line; SOI CMOS technology; high-temperature application; silicon-on-insulator

Subjects: Metal-insulator-semiconductor structures; CMOS integrated circuits

References

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      • A.A. Osman , M.A. Osman , N.S. Dogan . Zero-temperature-coefficient biasing point of partially depleted SOI MOSFETs. IEEE Trans. Electron Devices , 9 , 1709 - 1711
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      • D. Flandre , J.-P. Raskin , D. Vanhoenacker-Janvier , M.J. Deen , T.A. Fjeldly . (2002) SOI CMOS transistors for RF and microwave applications, CMOS RF Modeling, Characterization and Applications.
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      • J.P. Colinge . (1991) Silicon-on-insulator technology: materials to VLSI.
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      • Assaderaghi, F., Sinitsky, D., Parke, S.: `A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation', Proc. IEDM, 1994, p. 809–812.
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      • J.-P. Colinge . Reduction of kink effect in thin-film SOI MOSFET's. IEEE Electron Device Lett. , 2 , 97 - 99
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      • Dehan, M.: `Characterization and modeling of SOI RF integrated components', November 2003, PhD, Université catholique de Louvain, Belgium, p. 230.
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      • Si Moussa, M., Pavageau, C., Danneville, F.: `Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology', IEEE Radio Frequency Integrated Circuits Symp, 11-17 June 2005, Long Beach, USA, p. 495–498.
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      • Si Moussa, M.: `CMOS SOI distributed amplifiers for new communication systems', September 2006, PhD, Université catholique de Louvain, Belgium, p. 198.
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