Temperature dependence of IDDQ distribution: application for thermal delta IDDQ testing

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Temperature dependence of IDDQ distribution: application for thermal delta IDDQ testing

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Published

The increase in process parameter variations and off-state current for deep submicron complementary metal oxide semiconductor (CMOS) technologies makes conventional (single threshold) IDDQ testing ineffective. Delta IDDQ testing performed at two temperatures for a given test vector and called ‘thermal delta IDDQ testing’ is a more attractive alternative and is investigated by the authors. On the basis of statistical Monte Carlo simulations and industrial data, it is shown that lowering the temperature from 330 K to 280 K results in a more than ×100 reduction of IDDQ mean value and approximately ×15 reduction of IDDQ standard deviation of defect-free 0.18 µm CMOS circuits.

Inspec keywords: Monte Carlo methods; integrated circuit testing; statistical analysis; CMOS integrated circuits

Other keywords: CMOS technology; statistical Monte Carlo simulation; thermal delta IDDQ testing; temperature 280 K to 330 K; complementary metal oxide semiconductor

Subjects: Semiconductor integrated circuit design, layout, modelling and testing; Monte Carlo methods; CMOS integrated circuits

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