http://iet.metastore.ingenta.com
1887

Noise optimisation analysis of an active pixel sensor for low-noise real-time X-ray fluoroscopy

Noise optimisation analysis of an active pixel sensor for low-noise real-time X-ray fluoroscopy

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IET Circuits, Devices & Systems — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Theoretical calculations and simulation results for the noise of a hybrid active pixel sensor designed for real-time digital fluoroscopy are presented. Noise performance is given as a function of transistor dimensions, allowing the designer to choose appropriate device dimensions when designing flat-panel imaging circuits. Optimal device dimensions are derived for minimising the input referred noise of the active pixel to meet the stringent requirements for low-noise digital X-ray fluoroscopy (<1000 noise electrons).

References

    1. 1)
      • M.H. Izadi , K.S. Karim , A. Nathan , J.A. Rowlands . Low-noise pixel architecture for advanced diagnostic medical x-ray imaging applications. Proc. SPIE
    2. 2)
      • K.S. Karim , A. Nathan , J.A. Rowlands . Amorphous silicon active pixel sensor readout circuit for digital imaging. IEEE Trans. Electron Devices , 1 , 200 - 208
    3. 3)
    4. 4)
      • Y. Degerli , F. Lavernhe , P. Magnan , J.A. Farre . Analysis and reduction of signal readout circuitry temporal noise in CMOS image sensors for low-light levels. IEEE Trans. Electron Devices , 949 - 962
    5. 5)
      • S. Adachi , S. Hirasawa , M. Takahashi , H. Okada , Y. Yamane , S. Yamada . Noise properties of a Se-based flat-panel X-ray detector with CMOS readout integrated circuits. Proc. SPIE , 580 - 591
    6. 6)
      • J. Rhayem , D. Rigaud , M. Valenza , N. Szydlo , H. Lebrun . 1/f noise investigations in long channel length amorphous silicon thin-film transistors. J. Appl. Phys. , 4 , 1983 - 1989
    7. 7)
    8. 8)
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds_20070028
Loading

Related content

content/journals/10.1049/iet-cds_20070028
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address