State-of-the-art technologies and devices for high-voltage integrated circuits
State-of-the-art technologies and devices for high-voltage integrated circuits
- Author(s): F. Udrea
- DOI: 10.1049/iet-cds:20070025
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- Author(s): F. Udrea 1
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View affiliations
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Affiliations:
1: Department of Engineering, University of Cambridge, Cambridge, UK
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Affiliations:
1: Department of Engineering, University of Cambridge, Cambridge, UK
- Source:
Volume 1, Issue 5,
October 2007,
p.
357 – 365
DOI: 10.1049/iet-cds:20070025 , Print ISSN 1751-858X, Online ISSN 1751-8598
The current status of high-voltage power semiconductor devices and technologies for high-voltage integrated circuits is reviewed and the new trends in this field are discussed. The paper focuses on the concepts of the novel reduced surface field and state-of-the-art silicon technologies such as high-voltage silicon on insulator, which are expected to play an increasingly important role in power system on-chip manufacturing. Lateral devices such as LDMOSFETs, superjunctions and lateral insulated gate bipolar transistors are discussed. The paper also touches on emerging technologies such as unified MEMS-IC for enhanced breakdown capability and isolation. Finally, an overview of the fierce fight of technology survival in terms of specific on-state resistance against breakdown voltage is given.
Inspec keywords: silicon-on-insulator; power integrated circuits
Other keywords:
Subjects: Power semiconductor devices; Power electronics, supply and supervisory circuits; Power integrated circuits
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