Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes

Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes

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The transient current sharing in parallel connected Schottky-barrier diodes and MOSFET synchronous rectifiers is analysed. It is shown that, because of parasitic inductances the desired reduction of dead-time conducting losses and reverse-recovery peak current is limited, when discrete devices are used. The total amount of conducting losses in the free-wheeling circuit can increase. A reduction of switching losses in half-bridge configurations is possible because of secondary effects.


    1. 1)
      • Kassakian, J.G.: `The role of power electronics in future 42V automotive electrical systems', Proc. EPE-PEMC'02 Conf., September 2002, Dubrovnik, Croatia.
    2. 2)
      • Rajashekara, K.: `42V architecture for automobiles', Proc. IEEE Electrical Insulation Conf., Electrical Manufacturing and Coil Winding Technology Conf., September 2003, Indianapolis, USA, p. 431–434.
    3. 3)
    4. 4)
      • Garcia, O., Zumel, P., de Castro, A., Cobos, J.A., Uceda, J.: `An automotive 16 phases dc-dc converter', Proc. IEEE Power Electronics Specialist Conf. 2004, June 2004, Aachen, Germany.
    5. 5)
      • Polenov, D., Lutz, J., Merwerth, J., Pröbstle, H.: `Evaluation of topologies for bi-directional DC/DC-converters with overlapping input and output voltage ranges', Proc. PCIM Europe 2006 Conf., May 2006.
    6. 6)
      • R. Erickson , D. Maksimovic . (2000) Fundamentals of power electronics.
    7. 7)
      • Gerber, M., Ferreira, J.A., Seliger, N., Hofsajer, I.W.: `Design and evaluation of an automotive integrated system module', Proc. IEEE IAS Conf., October 2005, p. 1144–1151.
    8. 8)
      • Maxim Integrated Products Inc.: Application Note AN652 available at:
    9. 9)
      • On Semiconductor: Application Note AN1547/D available at:
    10. 10)
    11. 11)
      • A. Lindemann . Optimisation of low voltage power MOSFET components for high current applications. EPE J. , 5 - 10/48
    12. 12)
      • J. Lutz . (2006) Halbleiter-Leistungsbauelemente, Physik, Eigenschaften, Zuverlässigkeit.

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