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Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes

Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes

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The transient current sharing in parallel connected Schottky-barrier diodes and MOSFET synchronous rectifiers is analysed. It is shown that, because of parasitic inductances the desired reduction of dead-time conducting losses and reverse-recovery peak current is limited, when discrete devices are used. The total amount of conducting losses in the free-wheeling circuit can increase. A reduction of switching losses in half-bridge configurations is possible because of secondary effects.

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