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Modified emission of semiconductor nano-dots in three-dimensional photonic crystals

Modified emission of semiconductor nano-dots in three-dimensional photonic crystals

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Mono-dispersed polystyrene spheres were used to grow synthetic opal photonic crystals on glass substrates using controlled evaporation. Commercially available cadmium telluride (CdTe) semiconductor nano-dots with emission in the visible were infiltrated into a slice of opal voids by capillary action. The optical properties of CdTe dot loaded opal were studied by using a white light source and showed a red shift of the opal stop-band due to an increase in the effective refractive index. The emission of the CdTe dots was matched with the edge of the 〈111〉 direction stop-band of bare opal. Stop-band confined emission from CdTe dots was observed by pumping with an argon-ion laser. The full width at half maximum of the CdTe emission from an infiltrated section of the opal was significantly reduced due to the stop-band effect of bare opal.

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