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access icon free Noise analysis of reflection-type microwave RTD amplifier

  • Author(s): Jongwon Lee 1  and  Jooseok Lee 2
    • View affiliations
  • Source: Volume 14, Issue 7, October 2020, p. 966 – 971
    DOI:  10.1049/iet-cds.2020.0078 , Print ISSN 1751-858X, Online ISSN 1751-8598
© The Institution of Engineering and Technology
Received 19/02/2020, Accepted 03/06/2020, Revised 19/04/2020, Published 22/07/2020

This study reports an analysis of noise figures (NFs) in a reflection-type microwave amplifier using resonant tunnelling diodes (RTDs). The minimum NF for the RTD amplifier based on 0.9 μm InP process technology, featuring a power gain (S 21) of 10.4 dB and a dc-power consumption of 133 μW at a centre frequency of 5.7 GHz, is measured to be 5.08 dB at a bias voltage of 0.355 V. The estimated NF characteristic based on an equation of the noise factor caused by the shot noise (F SH) and a simulation of the noise factor generated by the thermal noise (F TH) closely matches the measured NF characteristic, in the high-gain bias range of 0.32–0.38 V and near the centre frequency. It is found that the measured NF value of 5.08 dB originates mostly from the F SH of 1.88 and the F TH of 2.02. Additionally, the effect of the RTD parameters on the achieved NF is investigated, indicating that the negative resistance (R D) magnitude had a dominant effect on the NF by changing the F TH as well as the F SH.

Inspec keywords: III-V semiconductors; indium compounds; thermal noise; integrated circuit modelling; resonant tunnelling diodes; shot noise; MMIC amplifiers; low-power electronics

Other keywords: power gain; size 0.9 mum; negative resistance magnitude; resonant tunnelling diodes; dc-power consumption; FTH; reflection-type microwave RTD amplifier; noise figures; power 133.0 muW; noise figure 5.08 dB; voltage 0.355 V; RTD parameters; noise analysis; frequency 5.7 GHz; noise factor; high-gain bias range; shot noise; FSH; NF characteristic; thermal noise; gain 10.4 dB; voltage 0.32 V to 0.38 V; bias voltage; InP

Subjects: Microwave integrated circuits; Amplifiers; Electrical/electronic equipment (energy utilisation); Analogue circuit design, modelling and testing

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