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access icon free Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study

© The Institution of Engineering and Technology
Received 14/01/2020, Accepted 22/07/2020, Revised 11/06/2020, Published 17/08/2020

In this study, a 60 nm gate length double-gate AlGaN/GaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed and different electrical characteristics, such as DC, small-signal, radio-frequency (RF) and high-frequency noise performances of the devices are characterised through TCAD device simulations. The results of double-gate MOS-HEMT are compared with the TCAD simulation results as well as with available experimental data of single-gate AlGaN/GaN MOS-HEMT having a similar gate length available from the literature. It is observed that the double-gate AlGaN/GaN/AlGaN MOS-HEMT shows good sub-threshold slope, improved ON current, short-channel effect immunity, improved RF and noise performance. A look-up table-based Verilog-A model is developed for both devices and the models are incorporated into the Cadence EDA tool to utilise the proposed device in circuit simulations. The Verilog-A model is applied to design a 1–20 GHz wideband feedback cascode low-noise amplifier (LNA). Performance variability of LNA due to single- and double-gate MOS-HEMT is also investigated.

Inspec keywords: semiconductor device models; microwave amplifiers; high electron mobility transistors; aluminium compounds; microwave field effect transistors; gallium compounds; technology CAD (electronics); hardware description languages; low noise amplifiers; III-V semiconductors; wide band gap semiconductors; table lookup

Other keywords: Cadence EDA tool; double-gate MOS-HEMT; single-gate MOS-HEMT; circuit simulations; TCAD device simulations; RF performance; wideband feedback cascode; AlGaN-GaN-AlGaN; performance variability; short-channel effect immunity; low-noise amplifier; metal-oxide-semiconductor high-electron-mobility transistor; electrical characteristics; look-up table; frequency 1.0 GHz to 20.0 GHz; sub-threshold slope; LNA; size 60.0 nm; noise performance; high-frequency noise performances; Verilog-A model

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Amplifiers; Solid-state microwave circuits and devices; Other field effect devices

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