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access icon free Modelling for triple gate spin-FET and design of triple gate spin-FET-based binary adder

© The Institution of Engineering and Technology
Received 20/07/2019, Accepted 28/01/2020, Revised 11/11/2019, Published 30/01/2020

In this study, an InAs channel-based triple gate spin-field effect transistor (FET) model is proposed. The proposed triple-gate spin-FET offers a high density of integration, consumes low power and offers very high switching speed. By incorporating the suitable parameters like channel length, spin diffusion length, channel resistance and junction polarisation, the modelled triple gate spin-FET is then used to implement 3-input XOR, 3-input XNOR and majority gate functions. The designs of 3-input XOR and majority gates were achieved keeping in view that the sum operation of a 1-bit full adder is obtained through XOR gate and the carry operation of 1-bit full adder is obtained through majority gate. Therefore, for designing a 1-bit full adder, only two spin-FETs will be required which signifies the compact nature of the design. In addition, a 2-bit ripple adder is designed with cascading two 1-bit full-adders. Finally, a comparative analysis of the proposed gates and 1-bit full adder with the reported work and conventional CMOS design was carried out in terms of employed number of devices, power consumption and speed. The analysis shows that proposed gates/adder offer better performance than the reported work and conventional CMOS designs.

Inspec keywords: indium compounds; optical logic; field effect transistors; CMOS logic circuits; logic gates; adders; III-V semiconductors

Other keywords: 2-bit ripple adder; conventional CMOS design; triple-gate spin-FET; spin diffusion length; cascading two 1-bit full-adders; junction polarisation; InAs; 3-input XOR; majority gate; indium arsenide channel-based triple gate spin-FET model; XOR gate; channel resistance; triple gate spin-FET-based binary adder; 3-input XNOR

Subjects: Optical logic devices and optical computing techniques; Logic circuits; CMOS integrated circuits; Logic elements; Logic and switching circuits

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