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Electronic enhancement effect of doped ferromagnetic material in biomolecular heterojunction switch

Electronic enhancement effect of doped ferromagnetic material in biomolecular heterojunction switch

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Density functional theory conjugated with non-equilibrium Green's function-based first principle approach is used to determine the ferromagnetic-doping effect in the current–voltage characteristics for the heterojunction biomolecular analytical structure. The quantum-mechanical transport phenomenon and multiple switching activities associated with sequential negative differential resistance properties have been observed for this adenine-thymine chain. The authors investigate the quantum-transport properties of conventional doping effect for ferromagnetic atoms in this bimolecular chain. The results show an electronic enhancement effect in quantum-ballistic conductivity for this chain along with sequential switching property. Among these ferromagnetic metals, Nickel shows significant transmission spectrum, sharp and prominent highest occupied molecular orbital (MO) and lowest un-occupied MO peak along with maximum quantum-ballistic current at room temperature. It is observed from the device density of states that large numbers of conducting channels are available for Nickel doping. This ensures high quantum-transmission current flow within the central molecular region for these ferromagnetic dopants. Compared to Iron and Cobalt, the current has been enhanced up to 4.05 times for Nickel dopant. High doping concentration (13.3%) has been introduced for this ab-initio model. It has found that the number of total switching process is increased during ferromagnetic doping mainly for Cobalt and Nickel dopants.

Inspec keywords: semiconductor device models; cobalt; ballistic transport; ferromagnetic materials; negative resistance; doping profiles; nickel; electronic density of states; density functional theory; ab initio calculations; iron; Green's function methods; DNA

Other keywords: ferromagnetic doping; ferromagnetic metals; current–voltage characteristics; device density of states; total switching process; ferromagnetic dopants; high doping concentration; iron doping; biomolecular heterojunction switch; nickel doping; temperature 293 K to 298 K; highest occupied molecular orbital; multiple switching activities; heterojunction biomolecular analytical structure; electronic enhancement effect; maximum quantum-ballistic current; conducting channels; nonequilibrium Green's function-based first principle approach; ferromagnetic-doping effect; density functional theory; conventional doping effect; cobalt dopants; quantum-ballistic conductivity; high quantum-transmission current flow; heterojunction bimolecular chain; biomolecular chain; quantum-transport properties; quantum-mechanical transport phenomenon; doped ferromagnetic material; sequential negative differential resistance properties; sequential switching property; ferromagnetic atoms; adenine-thymine heterojunction chain; lowest unoccupied MO peak

Subjects: Density functional theory, local density approximation (condensed matter electronic structure); Ab initio calculations (condensed matter electronic structure); Impurity concentration, distribution, and gradients; Ballistic transport; High-field transport and nonlinear effects (semiconductors/insulators); Semiconductor device modelling, equivalent circuits, design and testing; Doping and implantation of impurities; General mathematical techniques in electronic structure calculations (condensed matter)

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