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access icon free Analytical model for uniaxial strained Si inversion layer electron effective mobility

© The Institution of Engineering and Technology
Received 04/05/2018, Accepted 28/12/2018, Revised 08/12/2018, Published 07/01/2019

The electron effective mobility analytical model without empirical parameters is investigated for uniaxial strained Si inversion layer, which can be conveniently applied by device and circuit designers. By one-dimensional inverse transform for the three-dimensional (3D) scattering matrix element along the vertical channel direction, three scattering (coulomb scattering, acoustic phonon scattering and intervalley scattering) rate models are researched. Then, the surface roughness scattering rate is taken into account to calculate the 2D inversion layer electron mobility. Based on the models, the simulations have been carried out by Matlab. The simulation results are in accord with the reference data, and the saturation phenomenon is brought to light.

Inspec keywords: surface roughness; inversion layers; silicon; inverse transforms; S-matrix theory; electron mobility; elemental semiconductors

Other keywords: Coulomb scattering; one-dimensional inverse transform; Matlab; surface roughness scattering rate; empirical parameters; vertical channel direction; 2D inversion layer electron mobility; uniaxial strained Si inversion layer; Si; three-dimensional scattering matrix element; electron effective mobility; circuit designers; saturation phenomenon; intervalley scattering; acoustic phonon scattering

Subjects: Elemental semiconductors; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Integral transforms in numerical analysis; Function theory, analysis; Electronic structure of elemental semiconductors (thin films, low dimensional and nanoscale structures); Surface states, surface band structure, surface electron density of states

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