http://iet.metastore.ingenta.com
1887

Compact GaN class-AB Armstrong oscillator for resonant wireless power transfer

Compact GaN class-AB Armstrong oscillator for resonant wireless power transfer

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IET Circuits, Devices & Systems — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

In this study, a 4.4 MHz wireless power transfer (WPT) system was designed and implemented using a class-AB Armstrong oscillator that uses a packaged GaN on Si high electron mobility transistor. The oscillator is designed and simulated in advanced design system and then integrated with a magnetically coupled resonant WPT system. The transmitting planar coil of the WPT contains both the main and the feedback coils of the Armstrong oscillator. The whole system was implemented in a printed circuit board and tested. The DC-to-AC conversion efficiency of the simulated Armstrong oscillator is 69%. The maximum measured power transfer efficiency is 40.3% at a 2 cm distance between the transmitting and receiving coils. The input DC power of 37.5 mW provides 15.1 mW of AC power to the load with low distortion, making it suitable for low electromagnetic interference, size, power and cost applications such as biomedical implants.

References

    1. 1)
      • 1. Song, Y., Lee, J., Jang, J, et al: ‘A neural recording microimplants with wireless data and energy transfer link’. 6th Int. Conf. on Brain-Computer Interface (BCI), GangWon, 2018.
    2. 2)
      • 2. Wang, C., Li, J., Yang, Y., et al: ‘Combining solar energy harvesting with wireless charging for hybrid wireless sensor networks’, IEEE Trans. Mob. Comput., 2018, 17, (3), pp. 560576.
    3. 3)
      • 3. Piedra, D., Lu, B., Sun, M., et al: ‘Advanced power electronic devices based on gallium nitride (GaN)’, Electron Devices Meeting (IEDM), Washington, 2016.
    4. 4)
      • 4. Micovic, M., Kurdoghlian, A., Moyer, H., et al: ‘Gan MMIC technology for microwave and millimeter-wave applications’. Compound Semiconductor Integrated Circuit Symp. IEEE, California, 2005.
    5. 5)
      • 5. Xu, H., Sanabria, C., Chini, A., et al: ‘A C-band high-dynamic range gan hemt low-noise amplifier’, Microw. Wirel. Compon. Lett., 2004, 14, (6), pp. 262264.
    6. 6)
      • 6. Kurs, A., Karalis, A., Moffatt, R., et al: ‘Wireless power transfer via strongly coupled magnetic resonances’, Science, 2007, 317, pp. 8386.
    7. 7)
      • 7. O'Brien, K., Scheible, G., Gueldner, H., et al: ‘Analysis of wireless power supplies for industrial automation systems’. Annual Conf. of the IEEE Industrial Electronics Society, Roanoke, 2003.
    8. 8)
      • 8. Kiani, M., Ghovanloo, M.: ‘The circuit theory behind coupled-mode magnetic resonance-based wireless power transmission’, IEEE Trans. Circuits Syst., 2012, 59, (9), pp. 20652074.
    9. 9)
      • 9. Jolani, F., Yu, Y., Chen, Z., et al: ‘A planar magnetically coupled resonant wireless power transfer system using printed spiral coils’, IEEE Antennas Wirel. Propag. Lett., 2014, 13, pp. 16481651.
    10. 10)
      • 10. Armstrong, E.: ‘Some recent developments in the audion receiver’, Proc. Inst. Radio Eng., 1915, 3, pp. 215247.
    11. 11)
      • 11. Xue, L., Zhang, J.: ‘Single-stage 6.78 MHz power-amplifier design using high-voltage GaN power ICs for wireless charging applicationsSingle-stage 6.78 MHz power-amplifier design using high-voltage GaN power ICs for wireless charging applications’. Applied Power Electronics Conf. and Exposition, Tampa, 2017.
    12. 12)
      • 12. Choi, J., Tsukiyama, D., Tsuruda, Y., et al: ‘13.56 MHz 1.3 kW resonant converter with GaN FET for wireless power transfer’. Wireless Power Transfer Conf., Boulder, 2015.
    13. 13)
      • 13. Jarndal, A., Ghannouchi, F.: ‘Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects’, J. Solid-State Electron., 2016, 123, pp. 1925.
    14. 14)
      • 14. Nitronex Inc.: ‘AN-009: bias sequencing and temperature compensation for GaN HEMTs’, 2008.
    15. 15)
      • 15. Grebennikov, A., Sokal, N.: ‘Switchmode RF and microwave power amplifiers’ (Academic Press, MA, USA, 2012).
    16. 16)
      • 16. Mohan, S., Hershenson, M., Boyd, S., et al: ‘Simple accurate expressions for planar spiral inductances’, IEEE J. Solid-State Circuits, 1999, 34, (10), pp. 14191424.
    17. 17)
      • 17. Raju, S., Wu, R., Chan, M., et al: ‘Modeling of mutual coupling between planar inductors in wireless power applications’, IEEE Trans. Power Electron., 2014, 29, (1), pp. 481490.
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-cds.2018.5054
Loading

Related content

content/journals/10.1049/iet-cds.2018.5054
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address